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PDF IXXP50N60B3 Data sheet ( Hoja de datos )
| Número de pieza | IXXP50N60B3 | |
| Descripción | 600V IGBTs | |
| Fabricantes | IXYS | |
| Logotipo |  |
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XPTTM 600V IGBTs
GenX3TM
Extreme Light Punch Through
IGBT for 5-30 kHz Switching
IXXA50N60B3
IXXP50N60B3
IXXH50N60B3
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
FC
Md
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
600 V
600 V
±20 V
±30 V
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 5
Clamped Inductive Load
VGE= 15V, VCE = 360V, TJ = 150°C
RG = 22, Non Repetitive
TC = 25°C
120
50
200
25
200
ICM = 100
@VCE VCES
10
600
-55 ... +175
175
-55 ... +175
A
A
A
A
mJ
A
μs
W
°C
°C
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300 °C
260 °C
Mounting Force (TO-263)
Mounting Torque (TO-220 & TO-247)
TO-263
TO-220
TO-247
10..65 / 2.2..14.6
1.13 / 10
2.5
3.0
6.0
N/lb.
Nm/lb.in.
g
g
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC = 36A, VGE = 15V, Note 1
TJ = 150C
Characteristic Values
Min. Typ. Max.
600 V
3.5 6.0 V
25 A
2 mA
100 nA
1.55
1.80
1.80 V
V
© 2013 IXYS CORPORATION, All Rights Reserved
VCES = 600V
IC110 = 50A
VCE(sat) 1.80V
TO-263 (IXXA)
G
E
TO-220 (IXXP)
C (Tab)
GC E
TO-247 (IXXH)
C (Tab)
G
CE
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
Optimized for 5-30kHz Switching
Square RBSOA
Avalanche Capability
Short Circuit Capability
International Standard Packages
Advantages
High Power Density
175°C Rated
Extremely Rugged
Low Gate Drive Requirement
Easy to Parallel
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
DS100301C(8/13)
1 page  
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
3.0
Eoff Eon - - - -
2.5 TJ = 150ºC , VGE = 15V
VCE = 360V
2.0
I C = 72A
6
5
4
1.5 3
1.0
I C = 36A
2
0.5
5
1
10 15 20 25 30 35 40 45 50
RG - Ohms
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
2.2
2.0 Eoff
Eon - - - -
RG = 5ΩVGE = 15V
1.8 VCE = 360V
1.6
I C = 72A
4.5
4.0
3.5
3.0
1.4 2.5
1.2 2.0
1.0 I C = 36A 1.5
0.8 1.0
0.6 0.5
0.4
25
50 75 100
TJ - Degrees Centigrade
125
0.0
150
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
300 220
270
TJ = 150ºC
240
210
t f i td(off) - - - -
RG = 5Ω, VGE = 15V
VCE = 360V
200
180
160
180 140
150
TJ = 25ºC
120
120
100
90 80
60 60
30 40
15 20 25 30 35 40 45 50 55 60 65 70 75
IC - Amperes
© 2013 IXYS CORPORATION, All Rights Reserved
IXXA50N60B3 IXXP50N60B3
IXXH50N60B3
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
15
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
Eoff Eon - - - -
RG = 5ΩVGE = 15V
VCE = 360V
TJ = 150ºC
5
4
3
TJ = 25ºC
2
1
0
20 25 30 35 40 45 50 55 60 65 70 75
IC - Amperes
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
240 350
t f i td(off) - - - -
220 TJ = 150ºC, VGE = 15V
VCE = 360V
200
300
250
I C = 36A
180
200
160
I C = 72A
140
150
100
120 50
100
5
0
10 15 20 25 30 35 40 45 50
RG - Ohms
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
240 150
220 t f i
td(off) - - - -
RG = 5Ω, VGE = 15V
200 VCE = 360V
140
130
180 120
160 I C = 36A
140
110
100
120 90
100 80
80 I C = 72A
60
25
50
75 100
TJ - Degrees Centigrade
125
70
60
150
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXXP50N60B3.PDF ] | |
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