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IXTR90P10P の電気的特性と機能

IXTR90P10PのメーカーはIXYSです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTR90P10P
部品説明 Power MOSFET ( Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




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IXTR90P10P Datasheet, IXTR90P10P PDF,ピン配置, 機能
PolarPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTR90P10P
D
G
S
VDSS =
ID25
RDS(on)
=
- 100V
- 57A
27mΩ
ISOPLUS247
E153432
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 HZ , RMS t = 1min
Mounting Force
Maximum Ratings
- 100
- 100
V
V
±20
±30
- 57
- 225
- 90
2.5
V
V
A
A
A
J
10 V/ns
190 W
-55 ... +150
150
-55 ... +150
300
260
2500
20..120/4.5..27
6
°C
°C
°C
°C
°C
V~
N/lb.
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = - 45A, Note 1
Characteristic Values
Min.
Typ.
Max.
-100
V
- 2.0
- 4.0 V
±100 nA
- 25 μA
- 200 μA
27 mΩ
G
DS
Isolated Tab
G = Gate D = Drain
S = Source
Features
z Silicon Chip on Direct-Copper Bond
(DCB) Substrate
- UL Recognized Package
- Isolated Mounting Surface
- 2500V~ Electrical Isolation
z Avalanche Rated
z High Current Handling Capability
z Fast Intrinsic Diode
z The Rugged PolarPTM Process
z Low QG
z Low Drain-to-Tab capacitance
z Low Package Inductance
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z High-Side Switches
z Push Pull Amplifiers
z DC Choppers
z Automatic Test Equipment
z Current Regulators
© 2013 IXYS CORPORATION, All Rights Reserved
DS99985B(01/13)

1 Page





IXTR90P10P pdf, ピン配列
IXTR90P10P
Fig. 1. Output Characteristics @ TJ = 25ºC
-90
VGS = -10V
-80 - 9V
-70
- 8V
-60
-50
- 7V
-40
-30 - 6V
-20
-10 - 5V
0
0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2
VDS - Volts
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0.0
Fig. 3. Output Characteristics @ TJ = 125ºC
VGS = -10V
- 9V
- 8V
- 7V
- 6V
- 5V
-0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5
VDS - Volts
-4.0
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
Fig. 5. RDS(on) Normalized to ID = - 45A value vs.
Drain Current
VGS = -10V
TJ = 125ºC
TJ = 25ºC
-20 -40 -60 -80 -100 -120 -140 -160 -180
ID - Amperes
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
-240
VGS = -10V
-200
- 9V
-160
-120
- 8V
- 7V
-80
-40
0
0
- 6V
- 5V
-5 -10 -15 -20 -25 -30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = - 45A Value vs.
Junction Temperature
2.2
2.0 VGS = -10V
1.8
1.6 I D = - 90A
1.4 I D = - 45A
1.2
1.0
0.8
0.6
0.4
-50
-25
0 25 50 75
TJ - Degrees Centigrade
100 125
150
Fig. 6. Maximum Drain Current vs.
Case Temperature
-65
-55
-45
-35
-25
-15
-5
-50
-25
0 25 50 75 100 125 150
TC - Degrees Centigrade
© 2013 IXYS CORPORATION, All Rights Reserved


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部品番号部品説明メーカ
IXTR90P10P

Power MOSFET ( Transistor )

IXYS
IXYS


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