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PDF IXTC62N15P Data sheet ( Hoja de datos )
| Número de pieza | IXTC62N15P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
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Preliminary Technical Information
PolarHTTM Power
MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
IXTC 62N15P
IXTR 62N15P
VDSS =
ID25 =
RDS(on) ≤
150
36
45
V
A
mΩ
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
FC
Weight
Test Conditions
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 MΩ
Continuous
Transient
TC = 25° C
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS,
TJ ≤150° C, RG = 10 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Mounting force
ISOPLUS220
ISOPLUS247
ISOPLUS220
ISOPLUS247
Maximum Ratings
150 V
150 V
± 20
± 30
36
150
50
30
1.0
V
V
A
A
A
mJ
J
10 V/ns
150
-55 ... +175
150
-55 ... +150
300
11..65 / 2.5..15
20..120 / 4.5..25
3
5
W
°C
°C
°C
°C
N/lb
N/lb
g
g
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ± 20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125° C
RDS(on)
VGS = 10 V, ID = 31 A, Note 1
Characteristic Values
Min. Typ. Max.
150 V
3.0 5.0 V
± 100 nA
10 µA
200 µA
45 m Ω
ISOPLUS220 (IXTC)
E153432
G
DS
Isolated back surface
ISOPLUS247 (IXTR)
E153432
G
DS
G = Gate
S = Source
Isolated back surface
D = Drain
TAB = Drain
Features
l International standard isolated
packages
l UL recognized packages
l Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
l Fast intrinsic diode
Advantages
l Easy to mount
l Space savings
l High power density
© 2006 IXYS All rights reserved
DS99622E(05/06)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXTC62N15P.PDF ] | |
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