DataSheet.jp

IXTR40P50P の電気的特性と機能

IXTR40P50PのメーカーはIXYSです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTR40P50P
部品説明 Power MOSFET ( Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




このページの下部にプレビューとIXTR40P50Pダウンロード(pdfファイル)リンクがあります。

Total 5 pages

No Preview Available !

IXTR40P50P Datasheet, IXTR40P50P PDF,ピン配置, 機能
PolarPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTR40P50P
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 HZ ,RMS, t= 1min
Mounting Force
Maximum Ratings
- 500
- 500
±20
±30
- 22
-120
- 40
3.5
V
V
V
V
A
A
A
J
10
312
-55 ... +150
150
-55 ... +150
300
260
2500
20..120/4.5..27
5
V/ns
W
°C
°C
°C
°C
°C
V~
N/lb.
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = -1mA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = - 20A, Note 1
Characteristic Values
Min. Typ. Max.
- 500
V
- 2.0
- 4.0 V
±100 nA
- 50 μA
- 250 μA
260 mΩ
VDSS =
ID25 =
RDS(on)
- 500V
- 22A
260mΩ
ISOPLUS247
E153432
G
DS
Isolated Tab
G = Gate D = Drain
S = Source
Features
z Silicon Chip on Direct-Copper Bond
(DCB) Substrate
- UL Recognized Package
- Isolated Mounting Surface
- 2500V~ Electrical Isolation
z Dynamic dv/dt Rating
z Avalanche Rated
z Fast Intrinsic Diode
z The Rugged PolarPTM Process
z Low QG
z Low Drain-to-Tab Capacitance
z Low Package Inductance
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z High-Side Switches
z Push Pull Amplifiers
z DC Choppers
z Automatic Test Equipment
z Current Regulators
© 2012 IXYS CORPORATION, All Rights Reserved
DS99937C(12/12)

1 Page





IXTR40P50P pdf, ピン配列
IXTR40P50P
-40
-35
-30
-25
-20
-15
-10
-5
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGS = -10V
- 7V
- 6V
- 5V
-1 -2 -3 -4 -5 -6 -7 -8
VDS - Volts
-9
-40
-35
-30
-25
-20
-15
-10
-5
0
0
Fig. 3. Output Characteristics @ TJ = 125ºC
VGS = -10V
- 7V
- 6V
- 5V
-2 -4 -6 -8 -10 -12 -14 -16 -18
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = - 20A Value vs.
Drain Current
2.4
2.2 VGS = -10V
2.0
TJ = 125ºC
1.8
1.6
1.4
1.2
TJ = 25ºC
1.0
0.8
0
-10 -20 -30 -40 -50 -60 -70 -80
ID - Amperes
-90
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
-90
-80 VGS = -10V
-70
- 7V
-60
-50
-40
-30 - 6V
-20
-10
0
0
- 5V
-5 -10 -15 -20 -25 -30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = - 20A Value vs.
Junction Temperature
2.4
VGS = -10V
2.0
1.6
I D = - 40A
I D = - 20A
1.2
0.8
0.4
-50
-24
-25 0
25 50 75 100 125
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
150
-20
-16
-12
-8
-4
0
-50
-25
0 25 50 75 100 125 150
TC - Degrees Centigrade
© 2012 IXYS CORPORATION, All Rights Reserved


3Pages





ページ 合計 : 5 ページ
 
PDF
ダウンロード
[ IXTR40P50P データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IXTR40P50P

Power MOSFET ( Transistor )

IXYS
IXYS


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap