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PDF IXTC36P15P Data sheet ( Hoja de datos )
| Número de pieza | IXTC36P15P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
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Preliminary Technical Information
PolarPTM Power MOSFET
(Electrically Isolated Tab)
IXTC36P15P
IXTR36P15P
VDSS = -150V
ID25 = - 22A
RDS(on) ≤ 120mΩ
P-Channel Enhancement Mode
Avalanche Rated
ISOPLUS247 (IXTR)
E153432
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
FC
FC
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS, t = 1minute
Mounting Force (ISOPLUS220)
Mounting Force (ISOPLUS247)
ISOPLUS220
ISOPLUS247
Maximum Ratings
-150
-150
V
V
± 20
± 30
- 22
-100
- 36
1.5
V
V
A
A
A
J
10
150
- 55 ... +175
175
- 55 ... +175
300
260
2500
11..65 / 25..14.6
20..120 / 4.5..27
2
5
V/ns
W
°C
°C
°C
°C
°C
V~
N/lb
N/lb
g
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 150°C
RDS(on)
VGS = -10V, ID = -18A, Note 1
Characteristic Values
Min. Typ. Max.
-150
V
- 3.0
- 5.0 V
±100 nA
- 10 μA
- 250 μA
120 mΩ
G DS
Isolated
ISOPLUS220 (IXTC)
E153432
GDS
G = Gate
S = Source
Isolated
D = Drain
Features
z Silicon Chip on Direct-Copper Bond
(DCB) Substrate
z Isolated Mounting Surface
z 2500V~ Electrical Isolation
z Avalanche Rated
z Extended FBSOA
z Fast Intrinsic Diode
z Low RDS(ON) and QG
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z High-Side Switching
z Push Pull Amplifiers
z DC Choppers
z Automatic Test Equipment
z Current Regulators
z Battery Charger Applications
© 2011 IXYS CORPORATION, All rights reserved
DS99792A(01/11)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXTC36P15P.PDF ] | |
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