DataSheet.es    


PDF IXTR32P60P Data sheet ( Hoja de datos )

Número de pieza IXTR32P60P
Descripción Power MOSFET ( Transistor )
Fabricantes IXYS 
Logotipo IXYS Logotipo



Hay una vista previa y un enlace de descarga de IXTR32P60P (archivo pdf) en la parte inferior de esta página.


Total 5 Páginas

No Preview Available ! IXTR32P60P Hoja de datos, Descripción, Manual

Preliminary Technical Information
PolarPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTR32P60P
VDSS =
ID25 =
RDS(on)
- 600V
- 18A
385mΩ
ISOPLUS247 (IXTR)
E153432
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
Md
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
- 600
- 600
±20
±30
V
V
V
V
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
-18 A
- 90 A
- 32 A
3.5 J
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
10
310
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
300
260
50/60 Hz, RMS
t = 1min
2500
IISOL 1mA
Mounting force
t = 1s
3000
20..120/4.5..27
°C
°C
V~
V~
N/lb.
5g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = -10V, ID = -16A, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
- 500
V
- 2.5
- 4.5 V
±100 nA
- 50 μA
- 250 μA
385 mΩ
Isolated Tab
G = Gate D = Drain
S = Source
Features
z Silicon chip on Direct-Copper Bond
(DCB) substrate
- UL recognized package
- Isolated mounting surface
- 2500V electrical isolation
z Avalanche rated
z The rugged PolarPTM process
z Low QG
z Low Drain-to-Tab capacitance
z Low package inductance
- easy to drive and to protect
Applications
z High side switching
z Push-pull amplifiers
z DC Choppers
z Automatic test equipment
z Load-Switch Application
z Fuel Injection Systems
© 2008 IXYS CORPORATION, All rights reserved
DS99992(05/08)

1 page




IXTR32P60P pdf
1.000
0.100
0.010
0.001
0.00001
IXTR32P60P
Fig. 13. Maximum Transient Thermal Impedance
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: T_32P60P(B9) 6-03-08

5 Page










PáginasTotal 5 Páginas
PDF Descargar[ Datasheet IXTR32P60P.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IXTR32P60PPower MOSFET ( Transistor )IXYS
IXYS

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar