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PDF IXTR210P10T Data sheet ( Hoja de datos )
| Número de pieza | IXTR210P10T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
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Preliminary Technical Information
TrenchPTM
Power MOSFET
IXTR210P10T
VDSS =
ID25 =
≤RDS(on)
-100V
-195A
8mΩ
P-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
ISOPLUS247
E153432
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
ILRMS
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C (Chip Capability)
Lead Current Limit, RMS
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, 1 Minute
Mounting Force
Maximum Ratings
-100
-100
±15
±25
-195
-160
- 800
-100
3
V
V
V
V
A
A
A
A
J
10
595
- 55 ... +150
150
- 55 ... +150
300
260
2500
V/ns
W
°C
°C
°C
°C
°C
V~
20..120/4.5..27
5
N/lb.
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS VGS = ±15V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = -105A, Note 1
Characteristic Values
Min. Typ. Max.
-100
V
- 2.5
- 4.5 V
±100 nA
- 25 μA
- 300 μA
8 mΩ
G
DS
Isolated Tab
G = Gate D = Drain
S = Source
Features
z Silicon Chip on Direct-Copper Bond
(DCB) Substrate
z Isolated Mounting Surface
z 2500V~ Electrical Isolation
z Avalanche Rated
z Extended FBSOA
z Fast Intrinsic Rectifier
z Low RDS(ON) and QG
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z High-Side Switching
z Push Pull Amplifiers
z DC Choppers
z Automatic Test Equipment
z Current Regulators
z Battery Charger Applications
© 2013 IXYS CORPORATION, All Rights Reserved
DS100398A(01/13)
1 page  
IXTR210P10T
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
120
RG = 1Ω, VGS = -10V
VDS = - 50V
110
100 I D = -100A
90 I D = - 50A
80
70
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
350 700
t f td(off) - - - -
300 TJ = 125ºC, VGS = -10V
VDS = - 50V
250
I D = -100A
600
500
200 400
150 300
100
I D = - 50A
200
50 100
00
1 2 3 4 5 6 7 8 9 10
RG - Ohms
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
90 300
t f td(off) - - - -
80
RG = 1Ω, VGS = -10V
260
VDS = - 50V
TJ = 125ºC
70 220
60
TJ = 25ºC
50
180
140
40 100
-50 -55 -60 -65 -70 -75 -80 -85 -90 -95 -100
ID - Amperes
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
120
RG = 1Ω, VGS = -10V
VDS = - 50V
110
TJ = 125ºC
100
TJ = 25ºC
90
80
-50 -55 -60 -65 -70 -75 -80 -85 -90 -95 -100
ID - Amperes
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
90 320
85 t f
td(off) - - - -
80 RG = 1Ω, VGS = -10V
VDS = - 50V
75
70 I D = - 50A
300
280
260
240
65 220
60 200
55
I D = -100A
180
50 160
45 140
40 120
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
500 1000
t f td(off) - - - -
400 TJ = 125ºC, VGS = -10V
VDS = - 50V
800
300 I D = - 50A
600
I D = -100A
200 400
100 200
00
1 2 3 4 5 6 7 8 9 10
RG - Ohms
© 2013 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXTR210P10T.PDF ] | |
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