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PDF IXTK170P10P Data sheet ( Hoja de datos )
| Número de pieza | IXTK170P10P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
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PolarPTM
Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
IXTK170P10P
IXTX170P10P
VDSS =
ID25 =
≤RDS(on)
-100V
-170A
12mΩ
TO-264 (IXTK)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
ILRMS
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C (Chip Capability)
Lead Current Limit, RMS
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force (PLUS247)
Mounting Forque (TO-264)
PLUS247
TO-264
Maximum Ratings
-100
-100
V
V
±20
±30
-170
-160
- 510
V
V
A
A
A
-170
A
3.5 J
10 V/ns
890 W
-55 ... +150
150
-55 ... +150
300
260
20..120 / 4.5..27
1.13 / 10
6
10
°C
°C
°C
°C
°C
N/lb.
Nm/lb.in.
g
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = -1mA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
-100
V
- 2.0
- 4.0 V
±100 nA
- 50 μA
- 250 μA
12 mΩ
G
D
S
PLUS247 (IXTX)
Tab
G
DS
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z International Standard Packages
z Rugged PolarPTM Process
z High Current Handling Capability
z Fast Intrinsic Diode
z Avalanche Rated
z Low Package Inductance
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z High-Side Switches
z Push Pull Amplifiers
z DC Choppers
z Automatic Test Equipment
z Current Regulators
© 2013 IXYS CORPORATION, All Rights Reserved
DS99974B(01/13)
1 page  
1
0.1
0.01
0.001
0.00001
0.0001
Fig. 13. Maximum Transient Thermal Impedance
0.001
0.01
0.1
Pulse Width - Seconds
IXTK170P10P
IXTX170P10P
1 10
© 2013 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_170P10P(B9)03-25-09-C
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| PDF Descargar | [ Datasheet IXTK170P10P.PDF ] | |
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