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IXTR140P10T の電気的特性と機能

IXTR140P10TのメーカーはIXYSです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTR140P10T
部品説明 Power MOSFET ( Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




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IXTR140P10T Datasheet, IXTR140P10T PDF,ピン配置, 機能
TrenchPTM
Power MOSFET
IXTR140P10T
P-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on)
-100V
- 110A
11mΩ
ISOPLUS247
E153432
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, 1 Minute
Mounting Force
Maximum Ratings
-100
-100
±15
±25
- 110
- 400
-140
2.5
V
V
V
V
A
A
A
J
10
270
- 55 ... +150
150
- 55 ... +150
300
260
2500
V/ns
W
°C
°C
°C
°C
°C
V~
20..120/4.5..27
5
N/lb.
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS VGS = ±15V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = - 70A, Note 1
Characteristic Values
Min. Typ. Max.
-100
V
- 2.0
- 4.0 V
±100 nA
- 10 μA
-150 μA
11 mΩ
G
DS
Isolated Tab
G = Gate D = Drain
S = Source
Features
z Silicon Chip on Direct-Copper Bond
(DCB) Substrate
z Isolated Mounting Surface
z 2500V~ Electrical Isolation
z Avalanche Rated
z Extended FBSOA
z Fast Intrinsic Diode
z Low RDS(ON) and QG
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z High-Side Switching
z Push Pull Amplifiers
z DC Choppers
z Automatic Test Equipment
z Current Regulators
z Battery Charger Applications
© 2013 IXYS CORPORATION, All Rights Reserved
DS100376B(01/13)

1 Page





IXTR140P10T pdf, ピン配列
IXTR140P10T
-140
-120
-100
-80
-60
-40
-20
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGS = -10V
- 8V
- 7V
- 6V
- 5V
-0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125ºC
-140
VGS = -10V
-120
- 8V
- 7V
- 6V
-100
-80
-60
- 5V
-40
-20
0
0
-0.4 -0.8 -1.2 -1.6
VDS - Volts
- 4V
-2 -2.4
Fig. 5. RDS(on) Normalized to ID = - 70A Value vs.
Drain Current
2.0
VGS = -10V
1.8
TJ = 125ºC
1.6
1.4
1.2
TJ = 25ºC
1.0
0.8
0
-50
-100
-150
-200
-250 -300 -350
ID - Amperes
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
-900
-800
VGS = -10V
- 9V
- 8V
-700
-600
- 7V
-500
-400
-300
- 6V
-200
-100
- 5V
0
0 -10 -20 -30 -40 -50
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = - 70A Value vs.
Junction Temperature
2.2
2.0 VGS = -10V
1.8
1.6 I D = - 140A
1.4 I D = - 70A
1.2
1.0
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125
TJ - Degrees Centigrade
150
Fig. 6. Maximum Drain Current vs.
Case Temperature
-120
-100
-80
-60
-40
-20
0
-50
-25
0 25 50 75 100 125 150
TC - Degrees Centigrade
© 2013 IXYS CORPORATION, All Rights Reserved


3Pages


IXTR140P10T 電子部品, 半導体
1
0.1
0.01
0.001
0.00001
IXTR140P10T
Fig. 19. Maximum Transient Thermal Impedance
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_140P10T(A8-P10) 1-09-13

6 Page



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部品番号部品説明メーカ
IXTR140P10T

Power MOSFET ( Transistor )

IXYS
IXYS


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