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PDF IXTR120P20T Data sheet ( Hoja de datos )
| Número de pieza | IXTR120P20T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
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Preliminary Technical Information
TrenchPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXTR120P20T
VDSS =
ID25 =
≤RDS(on)
trr ≤
- 200V
- 90A
32mΩ
300ns
ISOPLUS247
E153432
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, 1 Minute
Mounting Force
Maximum Ratings
- 200
- 200
V
V
±15
±25
- 90
- 400
-100
3
V
V
A
A
A
J
10 V/ns
595 W
-55 ... +150
150
-55 ... +150
300
260
2500
°C
°C
°C
°C
°C
V∼
20..120/4.5..27
5
N/lb.
g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS VGS = ±15V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = - 60A, Note 1
Characteristic Values
Min. Typ. Max.
- 200
V
- 2.5
- 4.5 V
±200 nA
- 25 μA
- 300 μA
32 mΩ
G
DS
Isolated Tab
G = Gate
S = Source
D = Drain
Features
z Silicon Chip on Direct-Copper Bond
(DCB) Substrate
z Isolated Mounting Surface
z 2500V~ Electrical Isolation
z Avalanche Rated
z Extended FBSOA
z Fast Intrinsic Rectifier
z Low RDS(ON) and QG
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z High-Side Switching
z Push Pull Amplifiers
z DC Choppers
z Automatic Test Equipment
z Current Regulators
z Battery Charger Applications
© 2013 IXYS CORPORATION, All Rights Reserved
DS100403A(01/13)
1 page  
IXTR120P20T
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
180
RG = 1Ω, VGS = -10V
160 VDS = -100V
140 I D = -120A
120
100 I D = - 60A
80
60
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
700
600
t r td(on) - - - -
TJ = 125ºC, VGS = -10V
500 VDS = -100V
350
300
250
400 I D = -120A
300
200
I D = - 60A
200
150
100
100 50
00
1 2 3 4 5 6 7 8 9 10
RG - Ohms
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
80 250
75 t f td(off) - - - - 240
RG = 1Ω, VGS = -10V
70
VDS = -100V
230
65
TJ = 125ºC
60
220
210
55 200
50
45 TJ = 25ºC
190
180
40 170
-60 -70 -80 -90 -100 -110 -120
ID - Amperes
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
180
RG = 1Ω, VGS = -10V
160 VDS = -100V
TJ = 125ºC
140
120
100
TJ = 25ºC
80
60
-60 -70 -80 -90 -100 -110 -120
ID - Amperes
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
70 260
t f td(off) - - - -
65 RG = 1Ω, VGS = -10V
VDS = -100V
60
240
220
55 I D = - 60A
50
I D = - 120A
200
180
45 160
40 140
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
500 1000
450 t f
td(off) - - - -
400 TJ = 125ºC, VGS = -10V
VDS = -100V
350 I D = - 120A, - 60A
900
800
700
300 600
250 500
200 400
150 300
100 200
50 100
00
1 2 3 4 5 6 7 8 9 10
RG - Ohms
© 2013 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXTR120P20T.PDF ] | |
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