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IXTN170P10P PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTN170P10P
部品説明 Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXTN170P10P Datasheet, IXTN170P10P PDF,ピン配置, 機能
PolarPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTN170P10P
D
G
SS
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
50/60 Hz, RMS
t = 1 minute
IISOL 1mA
t = 1 second
Mounting Torque
Terminal Connection Torque
Maximum Ratings
-100
-100
V
V
±20
±30
-170
- 510
-170
3.5
V
V
A
A
A
J
10 V/ns
890 W
-55 ... +150
150
-55 ... +150
2500
3000
1.5/13
1.3/11.5
30
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = -1mA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
-100
V
- 2.0
- 4.0 V
±100 nA
- 50 μA
- 250 μA
12 mΩ
VDSS
ID25
=
=
RDS(on)
-100V
-170A
12mΩ
miniBLOC, SOT-227
E153432
S
G
G = Gate
S = Source
S
D
D = Drain
Either Source Terminal at miniBLOC
can be used as Main or Kelvin Source.
Features
z International Standard Package
z miniBLOC, with Aluminium Nitride
Isolation
z Rugged PolarPTM Process
z High Current Handling Capability
z Fast Intrinsic Diode
z Avalanche Rated
z Low Package Inductance
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z High-Side Switches
z Push Pull Amplifiers
z DC Choppers
z Automatic Test Equipment
z Current Regulators
© 2013 IXYS CORPORATION, All Rights Reserved
DS99975B(01/13)

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