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IXTN120N25 の電気的特性と機能

IXTN120N25のメーカーはIXYSです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTN120N25
部品説明 Power MOSFET ( Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




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IXTN120N25 Datasheet, IXTN120N25 PDF,ピン配置, 機能
High Current
MegaMOSTMFET
N-Channel Enhancement Mode
Preliminary Data Sheet
IXTK 120N25
VDSS
ID25
RDS(on)
=
=
=
250 V
120 A
20 m
Symbol Test conditions
VDSS
VDGR
VGS
VGSM
ID25
ID(RMS)
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TTJsMtg
TL
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1.0 M
Continuous
Transient
TC = 25°C MOSFET chip capability
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS
TJ 150°C, RG = 2
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
Maximum ratings
250 V
250 V
±20 V
±30 V
120 A
75 A
480 A
90 A
80 mJ
4.0 J
10 V/ns
TO-264 AA (IXTK)
G
D
S
D (TAB)
G = Gate
S = Source
D = Drain
Tab = Drain
730
-55 ... +150
150
-55 ... +150
300
0.7/6
10
W
°C
°C
°C
°C
Nm/lb.in.
g
Features
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Internationalstandardpackage
Fast switching times
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
VDSS
VGS = 0 V, ID = 1 mA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ±20 V DC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
RDS(on)
VPuGSlse=te1s0t,Vt,ID3=000.m5 sID,2d5 uty cycle d 2%
Characteristic Values
Min. Typ.
Max.
250 V
2.0 4.0 V
±200 nA
50 µA
3 mA
20 m
Applications
Motorcontrols
DC choppers
Switched-mode power supplies
Advantages
Easy to mount with one screw
(isolated mounting screw hole)
Space savings
High power density
© 2003 IXYS All rights reserved
DS98879D(11/03)

1 Page





IXTN120N25 pdf, ピン配列
120
110
100
90
80
70
60
50
40
30
20
10
0
0
Fig. 1. Output Characteristics
@ 25 Deg. C
VGS = 10V
7V
6V
5V
0.5 1 1.5 2 2.5
VD S - Volts
120
110
100
90
80
70
60
50
40
30
20
10
0
0
Fig. 3. Output Characteristics
@ 125 Deg. C
VGS = 10V
7V
6V
5V
12 34
VD S - Volts
5
Fig. 5. RDS(on) Norm alized to ID25
Value vs . ID
2.4
2.2 VGS = 10V
2 TJ = 125ºC
1.8
1.6
1.4
1.2 TJ = 25ºC
1
0.8
0
20 40 60 80 100 120 140 160 180 200 220
I D - Amperes
© 2003 IXYS All rights reserved
IXTK 120N25
Fig. 2. Extended Output Characteristics
@ 25 deg. C
220
200
VGS = 10V
8V
180 7V
160
6V
140
120
100
80
60
40 5V
20
0
0 1 2 3 4 5 6 7 8 9 10
VD S - Volts
Fig. 4. RDS(on) Norm alized to ID25 Value vs .
Junction Tem perature
2.6
2.4 VGS = 10V
2.2
2
1.8
1.6 ID = 120A
1.4 ID = 60A
1.2
1
0.8
0.6
0.4
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
130
120
110
100
90
80
70
60
50
40
30
20
10
0
-50
Fig. 6. Drain Current vs. Case
Tem perature
-25 0 25 50 75 100 125 150
TC - Degrees Centigrade


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部品番号部品説明メーカ
IXTN120N25

Power MOSFET ( Transistor )

IXYS
IXYS


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