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IXTN120N25 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTN120N25
部品説明 Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXTN120N25 Datasheet, IXTN120N25 PDF,ピン配置, 機能
High Current
MegaMOSTMFET
N-Channel Enhancement Mode
Preliminary Data Sheet
IXTK 120N25
VDSS
ID25
RDS(on)
=
=
=
250 V
120 A
20 m
Symbol Test conditions
VDSS
VDGR
VGS
VGSM
ID25
ID(RMS)
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TTJsMtg
TL
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1.0 M
Continuous
Transient
TC = 25°C MOSFET chip capability
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS
TJ 150°C, RG = 2
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
Maximum ratings
250 V
250 V
±20 V
±30 V
120 A
75 A
480 A
90 A
80 mJ
4.0 J
10 V/ns
TO-264 AA (IXTK)
G
D
S
D (TAB)
G = Gate
S = Source
D = Drain
Tab = Drain
730
-55 ... +150
150
-55 ... +150
300
0.7/6
10
W
°C
°C
°C
°C
Nm/lb.in.
g
Features
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Internationalstandardpackage
Fast switching times
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
VDSS
VGS = 0 V, ID = 1 mA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ±20 V DC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
RDS(on)
VPuGSlse=te1s0t,Vt,ID3=000.m5 sID,2d5 uty cycle d 2%
Characteristic Values
Min. Typ.
Max.
250 V
2.0 4.0 V
±200 nA
50 µA
3 mA
20 m
Applications
Motorcontrols
DC choppers
Switched-mode power supplies
Advantages
Easy to mount with one screw
(isolated mounting screw hole)
Space savings
High power density
© 2003 IXYS All rights reserved
DS98879D(11/03)

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