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IXTN102N65X2 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTN102N65X2
部品説明 Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXTN102N65X2 Datasheet, IXTN102N65X2 PDF,ピン配置, 機能
Advance Technical Information
X2-Class
Power MOSFET
IXTN102N65X2
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
dv/dt
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
50/60 Hz, RMS, t = 1minute
IISOL 1mA,
t = 1s
Mounting Torque for Base Plate
Terminal Connection Torque
D
G
S
S
Maximum Ratings
650
650
V
V
30 V
40 V
76 A
204 A
25 A
3J
595 W
50 V/ns
-55 ... +150
150
-55 ... +150
C
C
C
2500
3000
1.5/13
1.3/11.5
30
V~
V~
Nm/lb.in
Nm/lb.in
g
VDSS =
ID25 =
RDS(on)
650V
76A
30m
miniBLOC
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
Features
International Standard Package
miniBLOC with Aluminum Nitride
Isolation
LAovwalaQnGche
Rated
Low Package Inductance
Advantages
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 51A, Note 1
Characteristic Values
Min. Typ. Max.
650 V
3.0 5.0 V
100 nA
25 A
350 A
30 m
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
© 2015 IXYS CORPORATION, All Rights Reserved
DS100669(6/15)

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