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PDF IXTK102N65X2 Data sheet ( Hoja de datos )
| Número de pieza | IXTK102N65X2 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
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Preliminary Technical Information
X2-Class
Power MOSFET
IXTK102N65X2
IXTX102N65X2
VDSS =
ID25 =
RDS(on)
650V
102A
30m
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-264P (IXTK)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
dv/dt
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
Maximum Ratings
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
650 V
650 V
30 V
40 V
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
102
204
25
3
1040
50
-55 ... +150
150
-55 ... +150
A
A
A
J
W
V/ns
C
C
C
Maximum Lead Temperature for Soldering
300 °C
Plastic Body for 10s
260 °C
Mounting Torque (TO-264P)
Mounting Force (PLUS247)
1.13/10
20..120 /4.5..27
Nm/lb.in
N/lb
TO-264P
PLUS247
10 g
6g
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
650 V
3.0 5.0 V
100 nA
25 A
350 A
30 m
G
D
S
PLUS247 (IXTX)
Tab
G
DS
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
International Standard Packages
Low QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
© 2015 IXYS CORPORATION, All Rights Reserved
DS100655A(6/15)
1 page  
IXTK102N65X2
IXTX102N65X2
Fig. 13. Forward-Bias Safe Operating Area
1000
RDS(on) Limit
Fig. 14. Maximum Transient Thermal Impedance
1
100
25µs
0.1
10
1
0.1
10
TJ = 150ºC
TC = 25ºC
Single Pulse
100
VDS - Volts
100µs
0.01
1ms
10ms
DC
0.001
1,000
0.00001 0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2015 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_102N65X2(X8-R4T50) 6-16-15-A
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