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PDF IXTP32P20T Data sheet ( Hoja de datos )
| Número de pieza | IXTP32P20T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
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Preliminary Technical Information
TrenchPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTA32P20T
IXTP32P20T
IXTQ32P20T
IXTH32P20T
TO-263 AA (IXTA)
TO-220AB (IXTP)
VDSS =
ID25 =
≤RDS(on)
- 200V
- 32A
130mΩ
TO-3P (IXTQ)
G
S
D (Tab)
GD S
D (Tab)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Md
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
- 200
- 200
+ 15
+ 25
V
V
V
V
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
- 32
- 96
- 32
1
300
-55 ... +150
150
-55 ... +150
A
A
A
J
W
°C
°C
°C
1.6mm (0.062 in.) from Case for 10s
Plastic body for 10s
300 °C
260 °C
Mounting Force (TO-263)
10..65 / 2.2..14.6
Mounting Torque (TO-220, TO-247 & TO-3P) 1.13 / 10
N/lb.
Nm/lb.in.
TO-263
TO-220
TO-3P
TO-247
2.5 g
3.0 g
5.5 g
6.0 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS VGS = ± 15V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
- 200
V
- 2.0
- 4.0 V
±100 nA
- 25 μA
-1.25 mA
130 mΩ
G
D
S
D (Tab)
TO-247 (IXTH)
G
DS
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z International Standard Packages
z Avalanche Rated
z Extended FBSOA
z Fast Intrinsic Diode
z Low RDS(ON) and QG
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z High-Side Switching
z Push Pull Amplifiers
z DC Choppers
z Automatic Test Equipment
z Current Regulators
z Battery Charger Applications
© 2010 IXYS CORPORATION, All Rights Reserved
DS100288A(11/10)
1 page  
IXTA32P20T IXTQ32P20T
IXTP32P20T IXTH32P20T
Fig. 7. Input Admittance
-55
-50
-45
-40
-35
-30
TJ = 125ºC
25ºC
-25 - 40ºC
-20
-15
-10
-5
0
-3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5
VGS - Volts
Fig. 8. Transconductance
60
TJ = - 40ºC
50
40 25ºC
30 125ºC
20
10
0
0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55
ID - Amperes
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
-0.3
Fig. 9. Forward Voltage Drop of Intrinsic Diode
TJ = 125ºC
TJ = 25ºC
-0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1
VSD - Volts
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0
VDS = -100V
I D = -16A
I G = -1mA
20 40
Fig. 10. Gate Charge
60 80 100 120 140 160 180
QG - NanoCoulombs
100,000
f = 1 MHz
10,000
1,000
Fig. 11. Capacitance
Ciss
Coss
100
10
0
Crss
-5 -10 -15 -20 -25 -30 -35 -40
VDS - Volts
Fig. 12. Forward-Bias Safe Operating Area
-1000
- 100
-10
RDS(on) Limit
-1
- 0.1
-1
TJ = 150ºC
TC = 25ºC
Single Pulse
- 10
VDS - Volts
25µs
100µs
1ms
10ms
100ms
DC
- 100
- 1000
© 2010 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IXTP32P20T.PDF ] | |
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