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IXTA32P20T の電気的特性と機能

IXTA32P20TのメーカーはIXYSです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTA32P20T
部品説明 Power MOSFET ( Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




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IXTA32P20T Datasheet, IXTA32P20T PDF,ピン配置, 機能
Preliminary Technical Information
TrenchPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTA32P20T
IXTP32P20T
IXTQ32P20T
IXTH32P20T
TO-263 AA (IXTA)
TO-220AB (IXTP)
VDSS =
ID25 =
RDS(on)
- 200V
- 32A
130mΩ
TO-3P (IXTQ)
G
S
D (Tab)
GD S
D (Tab)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Md
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
- 200
- 200
+ 15
+ 25
V
V
V
V
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
- 32
- 96
- 32
1
300
-55 ... +150
150
-55 ... +150
A
A
A
J
W
°C
°C
°C
1.6mm (0.062 in.) from Case for 10s
Plastic body for 10s
300 °C
260 °C
Mounting Force (TO-263)
10..65 / 2.2..14.6
Mounting Torque (TO-220, TO-247 & TO-3P) 1.13 / 10
N/lb.
Nm/lb.in.
TO-263
TO-220
TO-3P
TO-247
2.5 g
3.0 g
5.5 g
6.0 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS VGS = ± 15V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
- 200
V
- 2.0
- 4.0 V
±100 nA
- 25 μA
-1.25 mA
130 mΩ
G
D
S
D (Tab)
TO-247 (IXTH)
G
DS
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z International Standard Packages
z Avalanche Rated
z Extended FBSOA
z Fast Intrinsic Diode
z Low RDS(ON) and QG
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z High-Side Switching
z Push Pull Amplifiers
z DC Choppers
z Automatic Test Equipment
z Current Regulators
z Battery Charger Applications
© 2010 IXYS CORPORATION, All Rights Reserved
DS100288A(11/10)

1 Page





IXTA32P20T pdf, ピン配列
TO-263 Outline
TO-220 Outline
Pins: 1 - Gate
3 - Source
2 - Drain
© 2010 IXYS CORPORATION, All Rights Reserved
IXTA32P20T IXTQ32P20T
IXTP32P20T IXTH32P20T
TO-3P Outline
Pins: 1 - Gate 2,4 - Drain
3 - Source
TO-247 Outline
1 = Gate
2 = Drain
3 = Source


3Pages


IXTA32P20T 電子部品, 半導体
IXTA32P20T IXTQ32P20T
IXTP32P20T IXTH32P20T
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
16.0
15.5
RG = 1, VGS = -10V
VDS = -100V
- 64A < ID < - 32A
15.0
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
16.0
15.5
RG = 1, VGS = -10V
VDS = -100V
25ºC < TJ < 125ºC
15.0
14.5 14.5
14.0 14.0
13.5 13.5
13.0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
13.0
-15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65
ID - Amperes
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
160
140 t r
td(on) - - - -
TJ = 125ºC, VGS = -10V
120 VDS = -100V
90
80
70
100
I D = - 64A, - 32A
60
80 50
60 40
40 30
20 20
0 10
0 2 4 6 8 10 12 14 16 18
RG - Ohms
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
15 70
t f td(off) - - - -
14 RG = 1, VGS = -10V
VDS = -100V
65
13 60
12
I D = - 64A
11
I D = - 32A
55
50
10 45
9 40
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
13.0
70
t f td(off) - - - -
12.5
RG = 10, VGS = -10V
65
VDS = -100V
12.0
TJ = 25ºC
60
11.5
TJ = 125ºC
55
11.0 50
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
140 300
120 t f
td(off) - - - -
TJ = 125ºC, VGS = -10V
100 VDS = -100V
I D = - 32A
260
220
80 180
I D = - 64A
60 140
40 100
20 60
10.5 45
-15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65
ID - Amperes
0 20
0 2 4 6 8 10 12 14 16 18
RG - Ohms
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

6 Page



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部品番号部品説明メーカ
IXTA32P20T

Power MOSFET ( Transistor )

IXYS
IXYS


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