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IXTH32N65X PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTH32N65X
部品説明 Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXTH32N65X Datasheet, IXTH32N65X PDF,ピン配置, 機能
Preliminary Technical Information
X-Class
Power MOSFET
N-Channel Enhancement Mode
IXTP32N65X
IXTQ32N65X
IXTH32N65X
VDSS =
ID25 =
RDS(on)
650V
32A
135m
TO-220AB (IXTP)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
TC = 25C
TC = 25C, Pulse Width Limited by TJM
IS ID25, VDD VDSS, TJ 150°C
TC = 25C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
TO-220
TO-3P
TO-247
Maximum Ratings
650
650
V
V
30 V
40 V
32 A
64 A
30 V/ns
500 W
-55 ... +150
150
-55 ... +150
C
C
C
300 °C
260 °C
1.13 / 10
Nm/lb.in
3.0 g
5.5 g
6.0 g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values
Min. Typ.
Max.
650 V
3.0 5.5 V
100 nA
5 A
50 A
135 m
GD S
TO-3P (IXTQ)
Tab
G
D
S
TO-247 (IXTH)
Tab
GDS
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
Low RDS(ON) and QG
Low Package Inductance
Fast Intrinsic Rectifier
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
© 2015 IXYS CORPORATION, All Rights Reserved
DS100585D(6/15)

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