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IXTH20N65X の電気的特性と機能

IXTH20N65XのメーカーはIXYSです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTH20N65X
部品説明 Power MOSFET ( Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




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IXTH20N65X Datasheet, IXTH20N65X PDF,ピン配置, 機能
Preliminary Technical Information
X-Class
Power MOSFET
N-Channel Enhancement Mode
IXTA20N65X
IXTP20N65X
IXTH20N65X
VDSS =
ID25 =
RDS(on)
650V
20A
210m
TO-263 (IXTA)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FMCd
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
Maximum Ratings
650
650
30
40
V
V
V
V
TC = 25C
TC = 25C, Pulse Width Limited by TJM
IS ID25, VDD VDSS, TJ 150°C
TC = 25C
20
40
30
320
-55 ... +150
150
-55 ... +150
A
A
V/ns
W
C
C
C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Mounting Force (TO-263)
Mounting Torque (TO-220 & TO-247)
10.65 / 2.2..14.6
1.13 / 10
N/lb
Nm/lb.in
TO-263
TO-220
TO-247
2.5 g
3.0 g
6.0 g
G
S
D (Tab)
TO-220 (IXTP)
GDS
TO-247 (IXTH)
D (Tab)
GDS
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
International Standard Packages
Low RDS(ON) and QG
Low Package Inductance
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values
Min. Typ.
Max.
650 V
3.0 5.5 V
100 nA
5 A
50 A
210 m
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
© 2015 IXYS CORPORATION, All Rights Reserved
DS100564E(6/15)

1 Page





IXTH20N65X pdf, ピン配列
20
18
16
14
12
10
8
6
4
2
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGS = 10V
8V
7V
6V
0.5 1 1.5 2 2.5 3 3.5 4
VDS - Volts
4.5
20
18
16
14
12
10
8
6
4
2
0
0
Fig. 3. Output Characteristics @ TJ = 125ºC
VGS = 10V
8V
7V
6V
5V
1 2 3 4 5 6 7 8 9 10 11 12
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 10A Value vs.
Drain Current
4.0
3.5 VGS = 10V
3.0
TJ = 125ºC
2.5
2.0
TJ = 25ºC
1.5
1.0
0.5
0
5 10 15 20 25 30 35 40 45
ID - Amperes
IXTA20N65X IXTP20N65X
IXTH20N65X
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
45
VGS = 10V
40 9V
35
30
8V
25
20
15 7V
10
5
6V
0
0 5 10 15 20 25 30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 10A Value vs.
Junction Temperature
3.8
3.4 VGS = 10V
3.0
2.6
I D = 20A
2.2
1.8 I D = 10A
1.4
1.0
0.6
0.2
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
1.3
1.2
1.1 BVDSS
1.0
0.9
0.8 VGS(th)
0.7
0.6
-60 -40 -20
0 20 40 60 80
TJ - Degrees Centigrade
100 120 140
© 2015 IXYS CORPORATION, All Rights Reserved


3Pages


IXTH20N65X 電子部品, 半導体
TO-263 Outline
1 = Gate
2 = Drain
3 = Source
4 = Drain
Bottom Side
TO-220 Outline
EA
oP
A1
Q H1
D
D1
EJECTOR
L1
L
A2
e
e1
c 3X b
3X b2
1 - Gate
2,4 - Drain
3 - Source
IXTA20N65X IXTP20N65X
IXTH20N65X
TO-247 Outline
DA
A
AA22
E B 0P O+ 0K M D B M
Q
R+
S D2
+
D1
D
0P1
4
D2 1 2 3 ixys option
L1
C
E1
L
E1
A1 b
c b2
b4
e
PINS: 1 - Gate
O+ J M C A M
2, 4 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

6 Page



ページ 合計 : 6 ページ
 
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部品番号部品説明メーカ
IXTH20N65X

Power MOSFET ( Transistor )

IXYS
IXYS


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