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IXFP22N65X2M の電気的特性と機能

IXFP22N65X2MのメーカーはIXYSです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFP22N65X2M
部品説明 Power MOSFET ( Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




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IXFP22N65X2M Datasheet, IXFP22N65X2M PDF,ピン配置, 機能
X2-Class HiperFETTM
Power MOSFET
Advance Technical Information
IXFP22N65X2M
VDSS =
ID25 =
RDS(on)
650V
8.5A
145m
N-Channel Enhancement Mode
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
650
650
V
V
30 V
40 V
8.5 A
44 A
5A
1J
50 V/ns
37 W
-55 ... +150
150
-55 ... +150
C
C
C
300 °C
260 °C
1.13 / 10
Nm/lb.in
2.5 g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 1.5mA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 11A, Note 1
Characteristic Values
Min. Typ.
Max.
650 V
3.5 5.0 V
100 nA
10 A
1.5 mA
145 m
OVERMOLDED TO-220
GDS
G = Gate
S = Source
D = Drain
Features
International Standard Package
Plastic Overmolded Tab
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
© 2016 IXYS CORPORATION, All Rights Reserved
DS100713(4/16)

1 Page





IXFP22N65X2M pdf, ピン配列
IXFP22N65X2M
Fig. 1. Output Characteristics @ TJ = 25ºC
20 VGS = 10V
9V
8V
16
12
7V
8
6V
4
5V
0
0 0.5 1 1.5 2 2.5 3 3.5
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125ºC
20 VGS = 10V
8V
16
7V
12
8 6V
4 5V
4V
0
01234567
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 11A Value vs.
Drain Current
5.0
4.5 VGS = 10V
4.0
TJ = 125ºC
3.5
3.0
2.5 TJ = 25ºC
2.0
1.5
1.0
0.5
0
10 20 30 40 50
ID - Amperes
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
60
VGS = 10V
50
9V
40
30 8V
20
7V
10
6V
0
0 5 10 15 20 25 30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 11A Value vs.
Junction Temperature
3.8
3.4 VGS = 10V
3.0
2.6 I D = 22A
2.2
1.8
I D = 11A
1.4
1.0
0.6
0.2
-50
-25
0 25 50 75 100
TJ - Degrees Centigrade
125
150
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
1.3
1.2
1.1 BVDSS
1.0
0.9
0.8 VGS(th)
0.7
0.6
-60 -40 -20
0 20 40 60 80 100 120 140 160
TJ - Degrees Centigrade
© 2016 IXYS CORPORATION, All Rights Reserved


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部品番号部品説明メーカ
IXFP22N65X2

Power MOSFET ( Transistor )

IXYS
IXYS
IXFP22N65X2M

Power MOSFET ( Transistor )

IXYS
IXYS


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