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IXFN66N85X の電気的特性と機能

IXFN66N85XのメーカーはIXYSです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFN66N85X
部品説明 Power MOSFET ( Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




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IXFN66N85X Datasheet, IXFN66N85X PDF,ピン配置, 機能
Advance Technical Information
X-Class HiPerFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN66N85X
D
G
S
S
VDSS =
ID25 =
RDS(on)
850V
65A
65m
miniBLOC, SOT-227
E153432
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
dv/dt
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
50/60 Hz, RMS
t = 1 minute
IISOL 1mA
t = 1 second
Mounting Torque
Terminal Connection Torque
Maximum Ratings
850
850
V
V
30 V
40 V
65 A
140 A
33 A
2.5 J
830 W
50 V/ns
-55 ... +150
150
-55 ... +150
C
C
C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in
Nm/lb.in
30 g
S
G
G = Gate
S = Source
S
D
D = Drain
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
Isolation Voltage 2500 V~
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low RDS(on)
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 33A, Note 1
Characteristic Values
Min. Typ. Max.
850 V
3.5 5.5 V
100 nA
50 A
3 mA
65 m
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
© 2016 IXYS CORPORATION, All Rights Reserved
DS100715(4/16)

1 Page





IXFN66N85X pdf, ピン配列
IXFN66N85X
70
60
50
40
30
20
10
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGS = 10V
9V
8V
7V
6V
0.5 1 1.5 2 2.5 3 3.5 4
VDS - Volts
4.5
Fig. 3. Output Characteristics @ TJ = 125ºC
70
VGS = 10V
60
8V
50
40 7V
30
6V
20
10 5V
0
01234 56789
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 33A Value vs.
Drain Current
3.5
VGS = 10V
3.0
TJ = 125ºC
10
2.5
2.0
1.5 TJ = 25ºC
1.0
0.5
0 20 40 60 80 100 120 140 160 180
ID - Amperes
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
180
VGS = 10V
160
140 9V
120
100 8V
80
60
7V
40
20
0
0
6V
5 10 15 20 25 30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 33A Value vs.
Junction Temperature
3.4
3.0 VGS = 10V
2.6
2.2
1.8
1.4
1.0
0.6
0.2
-50
-25
I D = 66A
I D = 33A
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
1.3
1.2
1.1 BVDSS
1.0
0.9
0.8
VGS(th)
0.7
0.6
0.5
-60 -40 -20
0 20 40 60 80 100 120 140 160
TJ - Degrees Centigrade
© 2016 IXYS CORPORATION, All Rights Reserved


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部品番号部品説明メーカ
IXFN66N85X

Power MOSFET ( Transistor )

IXYS
IXYS


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