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IXFX120N65X2 の電気的特性と機能

IXFX120N65X2のメーカーはIXYSです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFX120N65X2
部品説明 Power MOSFET ( Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




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IXFX120N65X2 Datasheet, IXFX120N65X2 PDF,ピン配置, 機能
Preliminary Technical Information
X2-Class HiPerFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK120N65X2
IXFX120N65X2
VDSS =
ID25 =
RDS(on)
650V
120A
24m
TO-264P (IXFK)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
dv/dt
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
Maximum Ratings
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
650 V
650 V
30 V
40 V
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
120
240
15
3.5
1250
50
-55 ... +150
150
-55 ... +150
A
A
A
J
W
V/ns
C
C
C
Maximum Lead Temperature for Soldering
300 °C
Plastic Body for 10s
260 °C
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
20..120 /4.5..27
Nm/lb.in
N/lb
TO-264P
PLUS247
10 g
6g
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
650 V
3.5 5.0 V
100 nA
50 A
5 mA
24 m
G
D
S
PLUS247 (IXFX)
Tab
G
DS
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
International Standard Packages
Low QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
© 2016 IXYS CORPORATION, All Rights Reserved
DS100685B(03/16)

1 Page





IXFX120N65X2 pdf, ピン配列
120
100
80
60
40
20
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGS = 10V
8V
7V
6V
5V
0.5 1 1.5 2 2.5
VDS - Volts
3
Fig. 3. Output Characteristics @ TJ = 125ºC
120
VGS = 10V
8V
100
7V
80
60 6V
40
5V
20
4V
0
01 2345 6
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 60A Value vs.
Drain Current
3.5
VGS = 10V
3.0
2.5
TJ = 125ºC
7
2.0
1.5 TJ = 25ºC
1.0
0.5
0
40 80 120 160 200 240 280
IA - Amperes
IXFK120N65X2
IXFX120N65X2
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
280
VGS = 10V
240 9V
200
8V
160
120
80
40
0
0
7V
6V
5V
5 10 15
VDS - Volts
20
Fig. 4. RDS(on) Normalized to ID = 60A Value vs.
Junction Temperature
3.4
3.0 VGS = 10V
2.6
2.2 I D = 120A
1.8
I D = 60A
1.4
1.0
0.6
0.2
-50
-25
0 25 50 75 100
TJ - Degrees Centigrade
125
25
150
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
1.3
1.2
1.1 BVDSS
1.0
0.9
0.8
VGS(th)
0.7
0.6
0.5
-60 -40 -20
0 20 40 60 80 100 120 140 160
TJ - Degrees Centigrade
© 2016 IXYS CORPORATION, All Rights Reserved


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部品番号部品説明メーカ
IXFX120N65X2

Power MOSFET ( Transistor )

IXYS
IXYS


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