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IXFK50N85X の電気的特性と機能

IXFK50N85XのメーカーはIXYSです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFK50N85X
部品説明 Power MOSFET ( Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




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IXFK50N85X Datasheet, IXFK50N85X PDF,ピン配置, 機能
X-Class HiPerFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFT50N85XHV
IXFH50N85X
IXFK50N85X
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-247 & TO-264P)
TO-268HV
TO-247
TO-264P
Maximum Ratings
850
850
V
V
30 V
40 V
50 A
125 A
25 A
2J
50 V/ns
890 W
-55 ... +150
150
-55 ... +150
C
C
C
300 °C
260 °C
1.13 / 10
Nm/lb.in
4g
6g
10 g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 4mA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values
Min. Typ.
Max.
850 V
3.5 5.5 V
100 nA
50 A
3 mA
105 m
VDSS =
ID25 =
RDS(on)
850V
50A
105m
TO-268HV (IXFT)
G
S
D (Tab)
TO-247 (IXFH)
GDS
TO-264P (IXFK)
D (Tab)
G
D
S
G = Gate
S = Source
D (Tab)
D = Drain
Tab = Drain
Features
International Standard Packages
High Voltage Package
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
© 2016 IXYS CORPORATION, All Rights Reserved
DS100704C(6/16)

1 Page





IXFK50N85X pdf, ピン配列
50
45
40
35
30
25
20
15
10
5
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGS = 10V
8V
7V
6V
5V
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VDS - Volts
5.5
Fig. 3. Output Characteristics @ TJ = 125ºC
50
VGS = 10V
45 8V
40 7V
35
30
25 6V
20
15
10
5V
5
4V
0
0 2 4 6 8 10 12
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 25A Value vs.
Drain Current
4.0
VGS = 10V
3.5
TJ = 125ºC
3.0
2.5
2.0
TJ = 25ºC
1.5
1.0
0.5
0
20 40 60 80 100 120
ID - Amperes
IXFT50N85XHV IXFH50N85X
IXFK50N85X
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
120
VGS = 10V
100 9V
80 8V
60
40 7V
20
6V
0
0 5 10 15 20 25
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 25A Value vs.
Junction Temperature
3.8
3.4 VGS = 10V
3.0
2.6
I D = 50A
2.2
1.8 I D = 25A
1.4
1.0
0.6
0.2
-50
-25
0 25 50 75 100
TJ - Degrees Centigrade
125
30
150
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
1.3
1.2
1.1 BVDSS
1.0
0.9
0.8
VGS(th)
0.7
0.6
0.5
-60 -40 -20
0 20 40 60 80 100 120 140 160
TJ - Degrees Centigrade
© 2016 IXYS CORPORATION, All Rights Reserved


3Pages


IXFK50N85X 電子部品, 半導体
TO-268HV Outline
IXFT50N85XHV IXFH50N85X
IXFK50N85X
PINS:
1 - Gate 2 - Source
3 - Drain
TO-247 Outline
D
A
AA22 E
R+
D
1
L1
23
L
A
B 0P O+ 0K M D B M
Q
S D2
0P1
ixys option
C
+
D1
4
E1
A1 b
c b2
b4
e
PINS: 1 - Gate
O+ J M C A M
2, 4 - Drain
3 - Source
TO-264P Outline
E
Q
R Q1
D
R1
1 23
L1
A
E1
D1
4
D2
b1
x2 e
b2
c
b
A
Terminals: 1 = Gate
2,4 = Drain
3 = Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_50N85X(S8) 2-03-16

6 Page



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部品番号部品説明メーカ
IXFK50N85X

Power MOSFET ( Transistor )

IXYS
IXYS


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