DataSheet.es    


PDF IXFH50N60X Data sheet ( Hoja de datos )

Número de pieza IXFH50N60X
Descripción Power MOSFET ( Transistor )
Fabricantes IXYS 
Logotipo IXYS Logotipo



Hay una vista previa y un enlace de descarga de IXFH50N60X (archivo pdf) en la parte inferior de esta página.


Total 6 Páginas

No Preview Available ! IXFH50N60X Hoja de datos, Descripción, Manual

X-Class HiPerFETTM
Power MOSFET
Preliminary Technical Information
IXFT50N60X
IXFQ50N60X
IXFH50N60X
VDSS =
ID25 =
RDS(on)
600V
50A
73m
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-268 (IXFT)
G
S
D (Tab)
TO-3P (IXFQ)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-247 & TO-3P)
TO-268
TO-3P
TO-247
Maximum Ratings
600
600
V
V
30 V
40 V
50 A
120 A
20 A
2J
50 V/ns
660 W
-55 ... +150
150
-55 ... +150
C
C
C
300 °C
260 °C
1.13 / 10
Nm/lb.in
4.0 g
5.5 g
6.0 g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 4mA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values
Min. Typ.
Max.
600 V
2.5 4.5 V
100 nA
25 A
1 mA
73 m
© 2015 IXYS CORPORATION, All Rights Reserved
G
D
S
TO-247 (IXFH)
D (Tab)
GDS
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
International Standard Packages
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
DS100657A(5/15)

1 page




IXFH50N60X pdf
IXFT50N60X IXFQ50N60X
IXFH50N60X
35
30
25
20
15
10
5
0
0
1
Fig. 13. Output Capacitance Stored Energy
Fig. 14. Forward-Bias Safe Operating Area
1000
RDS(on) Limit
100
10
25µs
100µs
1
0.1 TJ = 150ºC
TC = 25ºC
Single Pulse
0.01
100 200 300 400 500 600
10
VDS - Volts
100
VDS - Volts
Fig. 15. Maximum Transient Thermal Impedance
1ms
10ms
DC
1,000
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2015 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_50N60X(I8-R4T45) 5-22-15A

5 Page










PáginasTotal 6 Páginas
PDF Descargar[ Datasheet IXFH50N60X.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IXFH50N60P3Polar3 HiperFET Power MOSFETIXYS Corporation
IXYS Corporation
IXFH50N60XPower MOSFET ( Transistor )IXYS
IXYS

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar