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IXFQ30N60X の電気的特性と機能

IXFQ30N60XのメーカーはIXYSです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFQ30N60X
部品説明 Power MOSFET ( Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




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IXFQ30N60X Datasheet, IXFQ30N60X PDF,ピン配置, 機能
X-Class HiPerFETTM
Power MOSFET
Preliminary Technical Information
IXFT30N60X
IXFQ30N60X
IXFH30N60X
VDSS =
ID25 =
RDS(on)
600V
30A
155m
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-247 & TO-3P)
TO-268
TO-3P
TO-247
Maximum Ratings
600
600
V
V
30 V
40 V
30 A
60 A
10 A
1J
50 V/ns
500 W
-55 ... +150
150
-55 ... +150
C
C
C
300 °C
260 °C
1.13 / 10
Nm/lb.in
4.0 g
5.5 g
6.0 g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 4mA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
© 2015 IXYS CORPORATION, All Rights Reserved
Characteristic Values
Min. Typ.
Max.
600 V
2.5 4.5 V
100 nA
25 A
750 A
155 m
TO-268 (IXFT)
G
TO-3P (IXFQ)
S
D (Tab)
G
D
S
TO-247 (IXFH)
D (Tab)
G
DS
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
International Standard Packages
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
DS100658A(5/15)

1 Page





IXFQ30N60X pdf, ピン配列
Fig. 1. Output Characteristics @ TJ = 25ºC
30
VGS = 10V
9V
25
8V
20
7V
15
10
6V
5
5V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125ºC
30
VGS = 10V
9V
25 8V
20
7V
15
6V
10
5 5V
4V
0
0 2 4 6 8 10
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 15A Value vs.
Drain Current
5.0
4.5 VGS = 10V
4.0
3.5
3.0
TJ = 125ºC
2.5
TJ = 25ºC
2.0
1.5
1.0
0.5
0
10 20 30 40 50 60
ID - Amperes
12
70
IXFT30N60X IXFQ30N60X
IXFH30N60X
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
70
VGS = 10V
60
9V
50
40 8V
30
20 7V
10
0
0
6V
5 10 15 20 25
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 15A Value vs.
Junction Temperature
3.8
3.4 VGS = 10V
3.0
2.6
I D = 30A
2.2
1.8
I D = 15A
1.4
1.0
0.6
0.2
-50
-25
0 25 50 75 100
TJ - Degrees Centigrade
125
30
150
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
1.3
1.2
1.1 BVDSS
1.0
0.9
0.8
VGS(th)
0.7
0.6
-60 -40 -20
0 20 40 60 80 100 120 140 160
TJ - Degrees Centigrade
© 2015 IXYS CORPORATION, All Rights Reserved


3Pages


IXFQ30N60X 電子部品, 半導体
TO-268 Outline
Terminals: 1 - Gate
3 - Source
2,4 - Drain
TO-3P Outline
E
++
A
A2
S
D
1 23
L1
A1
0P
0P1
D1
E1
+
4
b2
e
b
b4
c
PINS: 1 - Gate
2, 4 - Drain
3 - Source
IXFT30N60X IXFQ30N60X
IXFH30N60X
TO-247 Outline
D
A
AA22 E
R+
D
1
L1
23
L
A
B 0P O+ 0K M D B M
Q
S D2
0P1
ixys option
C
+
D1
4
E1
A1 b
c b2
b4
e
PINS: 1 - Gate
O+ J M C A M
2, 4 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

6 Page



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部品番号部品説明メーカ
IXFQ30N60X

Power MOSFET ( Transistor )

IXYS
IXYS


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