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IXD75IF650NA の電気的特性と機能

IXD75IF650NAのメーカーはIXYSです、この部品の機能は「XPT IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXD75IF650NA
部品説明 XPT IGBT
メーカ IXYS
ロゴ IXYS ロゴ 




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IXD75IF650NA Datasheet, IXD75IF650NA PDF,ピン配置, 機能
XPT IGBT
Trench IGBT (medium speed)
Copack
Part number
IXD75IF650NA
IXD75IF650NA
VCES
I C25
VCE(sat)
=
=
=
tentative
650 V
75 A
1.5 V
(G) 1
2 (C)
3 (E)
Features / Advantages:
Easy paralleling due to the positive temperature
coefficient of the on-state voltage
Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 2x Ic
Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Applications:
AC motor drives
Solar inverter
Medical equipment
Uninterruptible power supply
Air-conditioning systems
Welding equipment
Switched-mode and resonant-mode
power supplies
Inductive heating, cookers
Pumps, Fans
Package: SOT-227B (minibloc)
Isolation Voltage: 3000 V~
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131204

1 Page





IXD75IF650NA pdf, ピン配列
IXD75IF650NA
Package SOT-227B (minibloc)
Symbol Definition
I RMS
TVJ
T op
Tstg
Weight
RMS current
virtual junction temperature
operation temperature
storage temperature
Conditions
per terminal 1)
MD
M
T
d Spp/App
d Spb/Apb
V
ISOL
mounting torque
terminal torque
creepage distance on surface | striking distance through air
isolation voltage
t = 1 second
t = 1 minute
terminal to terminal
terminal to backside
50/60 Hz, RMS; IISOL 1 mA
1) IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product
with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.
tentative
Ratings
min. typ. max. Unit
150 A
-40 175 °C
-40 150 °C
-40 150 °C
30 g
1.1 1.5 Nm
1.1 1.5 Nm
10.5 3.2
mm
8.6 6.8
mm
3000
V
2500
V
Product Marking
Part No.
Logo
XXXXX ®
Zyyww
abcd
Assembly Line
DateCode
Assembly Code
Part number
I = IGBT
X = XPT IGBT
D = Trench 1 / std
75 = Current Rating [A]
IF = Copack
650 = Reverse Voltage [V]
NA = SOT-227B (minibloc)
Ordering
Standard
Part Number
IXD75IF650NA
Marking on Product
IXD75IF650NA
Delivery Mode
Tube
Quantity Code No.
10 513716
Equivalent Circuits for Simulation
I V0
R0
V 0 max
R0 max
threshold voltage
slope resistance *
* on die level
T VJ = 175 °C
V
m
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131204


3Pages


IXD75IF650NA 電子部品, 半導体
Diode
150
100
IF
[A]
50
TVJ = 150°C
TVJ = 25°C
IXD75IF650NA
tentative
3.5
TVJ = 150°C
VR = 300 V
3.0
2.5
Qrr
2.0
[μC]
1.5
1.0
75 A
40 A
10 A
0
0123
VF [V]
Fig. 1 Typ. Forward current versus VF
4
70
TVJ = 150°C
VR = 300 V
60
75 A
40 A
50
Irr
40
[A]
30
10 A
20
10
400 600 800 1000 1200 1400 1600 1800 2000
diF /dt [A/μs]
Fig. 3 Typ. peak reverse current IRM vs. di/dt
700
TVJ = 150°C
600 VR = 300 V
500
Erec
400
[μJ]
300
75 A
40 A
10 A
200
0.5
400 600 800 1000 1200 1400 1600 1800 2000
diF /dt [A/μs]
Fig. 2 Typ. reverse recov.charge Qrr vs. di/dt
200
TVJ = 150°C
VR = 300 V
160
trr
120
[ns]
80
75 A
40 A
10 A
40
400 600 800 1000 1200 1400 1600 1800 2000
diF /dt [A/μs]
Fig. 4 Typ. recovery time trr versus di/dt
1.2
1.0
0.8 Irr
Kf 0.6
0.4
0.2
Qrr
75 A
300 V
1200 A/µs
100
400 600 800 1000 1200 1400 1600 1800 2000
diF /dt [A/μs]
Fig. 5 Typ. recovery energy Erec versus di/dt
0.0
0 20 40 60 80 100 120 140
TVJ [°C]
Fig. 6 Dynamic parameters Qrr, Irr vs. TVJ
160
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131204

6 Page



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部品番号部品説明メーカ
IXD75IF650NA

XPT IGBT

IXYS
IXYS


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