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IXA27IF1200HJ の電気的特性と機能

IXA27IF1200HJのメーカーはIXYSです、この部品の機能は「XPT IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXA27IF1200HJ
部品説明 XPT IGBT
メーカ IXYS
ロゴ IXYS ロゴ 




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IXA27IF1200HJ Datasheet, IXA27IF1200HJ PDF,ピン配置, 機能
XPT IGBT
Copack
Part number
IXA27IF1200HJ
IXA27IF1200HJ
VCES
I C25
VCE(sat)
=
=
=
1200 V
43 A
1.8 V
(G) 1
2 (C)
3 (E)
Backside: isolated
Features / Advantages:
Easy paralleling due to the positive temperature
coefficient of the on-state voltage
Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Applications:
AC motor drives
Solar inverter
Medical equipment
Uninterruptible power supply
Air-conditioning systems
Welding equipment
Switched-mode and resonant-mode
power supplies
Inductive heating, cookers
Pumps, Fans
Package: ISOPLUS247
Isolation Voltage: 3600 V~
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
Soldering pins for PCB mounting
Backside: DCB ceramic
Reduced weight
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20100623b

1 Page





IXA27IF1200HJ pdf, ピン配列
IXA27IF1200HJ
Package ISOPLUS247
Symbol Definition
I RMS
TVJ
T op
Tstg
Weight
RMS current
virtual junction temperature
operation temperature
storage temperature
Conditions
per terminal
FC
d Spp/App
d Spb/Apb
V
ISOL
mounting force with clip
creepage distance on surface | striking distance through air
isolation voltage
t = 1 second
t = 1 minute
terminal to terminal
terminal to backside
50/60 Hz, RMS; IISOL 1 mA
Ratings
min. typ. max.
70
-40 150
-40 125
-40 150
6
20 120
2.7
4.1
3600
3000
Unit
A
°C
°C
°C
g
N
mm
mm
V
V
Product Marking
Logo
Part No.
Assembly Line
Assembly Code
Date Code
IXYS
ISOPLUS®
XXXXXXXXX
Zyyww
abcd
Part number
I = IGBT
X = XPT IGBT
A = Gen 1 / std
27 = Current Rating [A]
IF = Copack
1200 = Reverse Voltage [V]
HJ = ISOPLUS247 (3)
Ordering
Standard
Part Number
IXA27IF1200HJ
Marking on Product
IXA27IF1200HJ
Delivery Mode
Tube
Quantity Code No.
30 509098
Equivalent Circuits for Simulation
I V0
R0
V 0 max
R0 max
threshold voltage
slope resistance *
* on die level
IGBT
1.1
55
T VJ = 150 °C
Diode
1.25 V
28.3 m
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20100623b


3Pages


IXA27IF1200HJ 電子部品, 半導体
IXA27IF1200HJ
Diode
60
50
40
IF
30
[A]
20
10
TVJ = 125°C
TVJ = 25°C
0
0.0 0.5 1.0 1.5 2.0 2.5
VF [V]
Fig. 7 Typ. Forward current versus VF
3.0
70
60
50
IRR 40
[A] 30
TVJ = 125°C
VR = 600 V
60 A
30 A
15 A
20
10
0
300 400 500 600 700 800 900 1000 1100
diF /dt [A/µs]
Fig. 9 Typ. peak reverse current IRM vs. di/dt
2.0
TVJ = 125°C
VR = 600 V
1.6
Erec 1.2
[mJ]0.8
60 A
30 A
15 A
0.4
7
6
5
Qrr
4
[µC]
3
2
T = 125°C
VJ
VR = 600 V
60 A
30 A
15 A
1
300 400 500 600 700 800 900 1000 1100
diF /dt [A/µs]
Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt
700
600
TVJ = 125°C
VR = 600 V
500
trr 400
[ns] 300
200
100
60 A
30 A
15 A
0
300 400 500 600 700 800 900 1000 1100
diF /dt [A/µs]
Fig. 10 Typ. recovery time trr versus di/dt
10
1
ZthJC
[K/W]
0.1
Diode
IGBT
0.0
300 400 500 600 700 800 900 1000 1100
diF /dt [A/µs]
Fig.11 Typ. recovery energy Erec versus di/dt
0.01
0.001
0.01
0.1
1
tp [s]
Fig. 12 Typ. transient thermal impedance
10
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20100623b

6 Page



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部品番号部品説明メーカ
IXA27IF1200HJ

XPT IGBT

IXYS
IXYS


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