IX2127 Datasheet PDF - IXYS
| Part Number | IX2127 | |
| Description | High-Voltage Power MOSFET & IGBT Driver | |
| Manufacturers | IXYS | |
| Logo |  |
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INTEGRATED CIRCUITS DIVISION
IX2127
High-Voltage
Power MOSFET & IGBT Driver
Driver Characteristics
Parameter
Rating
VOFFSET
IO +/- (Source/Sink)
VCSth
tON / tOFF (Typical)
600
250/500
250
100
Units
V
mA
mV
ns
Features
• Floating Channel Designed for Bootstrap Operation
up to 600V
• Tolerant to Negative Transient Voltages; dV/dt
Immune
• Undervoltage Lockout
• 3.3V, 5V, and 12V Input Logic Compatible
• Open-Drain FAULT Indicator Pin Shows
Over-Current Shutdown
• Output in Phase with the Input
Applications
• High-Speed Gate Driver
• Motor Drive Inverter
Pb e3
IX2127 Block Diagram
Description
The IX2127 is a high-voltage, high-speed power
MOSFET and IGBT driver. High-voltage level-shift
circuitry enables this device to operate up to 600V.
IXYS Integrated Circuits Division’s proprietary
common-mode design techniques provide stable
operation in high dV/dt noise environments.
An on-board comparator can be used to detect an
over-current condition in the driven MOSFET or IGBT
device, and then shut down drive to that device. An
open-drain output, FAULT, indicates that an
over-current shutdown has occurred.
The gate driver output typically can source 250mA
and sink 500mA, which is suitable for fluorescent lamp
ballast, motor control, SMPS, and other converter
drive topologies.
The IX2127 is provided in 8-pin DIP and 8-pin SOIC
packages, and is available in Tape & Reel versions.
See ordering information below.
Ordering Information
Part
IX2127G
IX2127N
IX2127NTR
Description
8-Pin DIP (50/Tube)
8-Pin SOIC (100/Tube)
8-Pin SOIC (2000/Reel)
VCC
IN
FAULT
COM
VCC Low Side High Side
Data Latch
Enable
Transmitter
Low-High
Level Shift
Receiver
Undervoltage Lockout
Buffer
Blanking
Signal
Delay
QR
S
Receiver
High-Low
Level Shift
Transmitter
Enable
Data Latch
+
_
Comparator
VB
HO
VS
CS
DS-IX2127-R03
www.ixysic.com
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INTEGRATED CIRCUITS DIVISION
IX2127
1.6 Electrical Characteristics
Unless otherwise specified, the test conditions are: VCC=VBS=12V; VCC, IN, FAULT, and Leakage voltages and
currents are referenced to COM; VB, HO, and CS voltages and currents are referenced to VS .
1.6.1 Power Supply Specifications
Parameter
Quiescent VCC Supply Current
Quiescent VBS Supply Current
VBS UVLO Positive-Going Threshold
VBS UVLO Negative-Going Threshold
Offset Supply Leakage Current
Conditions
VIN=0V
VIN=0V
-
-
VB=VS=600V
Symbol
IQCC
IQBS
VBS_UV+
VBS_UV-
ILKG
Minimum
-
-
6.8
6.3
-
Typical
280
500
7.7
7.2
-
Maximum
400
1000
8.6
8.1
2
Units
A
V
A
1.6.2 Gate Drive and Shutdown Specifications
Parameter
Conditions
High Level Output Voltage, VB-VHO
Low Level Output Voltage, VHO
Output Short Circuit Pulsed Current
CS Input, Positive-Going Threshold
“High” CS Bias Current
IHO=0A
IHO=0A
VHO=0V, VIN=5V, PW<10s,
RGATE=20* (see Figure 1)
VHO=12V, VIN=0V, PW<10s,
RGATE=20* (see Figure 1)
VCC=9V to 12V
VCS=3V
VCS=0V
* RGATE value must be 20 or greater.
Symbol
VOH
VOL
IHO+
IHO-
VCS_TH+
ICS+
ICS-
Minimum
-
-
-200
420
180
-
-
Typical
-
-
-250
500
260
-
-
Maximum
100
100
Units
mV
-
mA
-
320 mV
1
A
-1
1.6.3 Logic I/O Specifications
Parameter
Logic “1” Input Voltage
Logic “0” Input Voltage
Logic “1” Input Bias Current
Logic “0” Input Bias Current
FAULT On-Resistance
Conditions
VCC=9V to 12V
VCC=9V to 12V
VIN=5V
VIN=0V
-
Symbol
VIH
VIL
IIN+
IIN-
FLT, RON
Minimum
3.0
-
-
-
-
Typical
-
-
2.6
-
72
Maximum Units
-V
0.8
15 A
-1
-
1.6.4 Thermal Specifications
Parameter
Thermal Resistance, Junction to Ambient:
8-Lead DIP
8-Lead SOIC
Conditions
-
Symbol Minimum Typical Maximum Units
RJA
-
-
- 125 °C/W
- 200
R03 www.ixysic.com
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| Information | Total 13 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IX2127.PDF Datasheet ] | |
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