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NJG1812ME4 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 NJG1812ME4
部品説明 HIGH POWER DPDT SWITCH GaAs MMIC
メーカ New Japan Radio
ロゴ New Japan Radio ロゴ 

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NJG1812ME4 Datasheet, NJG1812ME4 PDF,ピン配置, 機能
NJG1812ME4
HIGH POWER DPDT SWITCH GaAs MMIC
GENERAL DESCRIPTION
The NJG1812ME4 is a GaAs DPDT switch MMIC suitable for
antenna swapping of LTE/UMTS/CDMA/GSM applications.
The NJG1812ME4 features very low insertion loss, low distortion
and excellent linearity performance down to 1.8V 1bit control voltage
at high frequency up to 3GHz. In addition, this switch is able to
handle high power signals.
The NJG1812ME4 has ESD protection devices to achieve
excellent ESD performances. No DC Blocking capacitors are
required for all RF ports unless DC is biased externally. And the
small & thin EQFN12-E4 package is adopted.
PACKAGE OUTLINE
NJG1812ME4
APPLICATIONS
Antenna swapping, General purpose switching applications
LTE, UMTS, CDMA, GSM systems
FEATURES
Low voltage logic control
VCTL(H)=1.35V to 5.0V
Low voltage operation
VDD=2.7V typ.
Low insertion loss
0.25dB typ. @f=900MHz, PIN=+35dBm
0.35dB typ. @f=1900MHz, PIN=+33dBm
0.45dB typ. @f=2700MHz, PIN=+27dBm
Low distortion
2nd harmonics=-89dBm typ. @ f=786.5MHz, PIN=+23dBm
3rd harmonics=-89dBm typ. @ f=710MHz, PIN=+23dBm
P-0.1dB
+36 dBm min.
Ultra-small and ultra-thin package
EQFN12-E4 (Package size: 2.0 x 2.0 x 0.397 mm typ.)
RoHS compliant and Halogen Free, MSL1
PIN CONFIGURATION
(TOP VIEW)
1PIN INDEX GND P3 GND
12 11 10
VDD 1
9 P4
GND 2
8 GND
VCTL 3
7 P1
Pin connection
1. VDD
7. P1
2. GND
8. NC(GND)
3. VCTL
9. P4
4. GND
10. NC(GND)
5. P2
11. P3
6. GND
12. GND
Exposed PAD: GND
4
GND
TRUTH TABLE
56
P2 GND
VCTL
L
H
“H”=VCTL(H), “L”=VCTL(L)
Path
P1-P4
P2-P3
P1-P3
P2-P4
Ver.2016-06 -13
-1-

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HIGH POWER DPDT SWITCH GaAs MMIC

New Japan Radio
New Japan Radio

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