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PDF MUR3040PT Data sheet ( Hoja de datos )
| Número de pieza | MUR3040PT | |
| Descripción | Ultrafast Recovery Rectifier | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
Ultrafast Recovery Rectifier
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized VF vs. IR trade off for high efficiency
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Full lead (Pb)-free and RoHS compliant devices
• Designed and qualified for industrial level
APPLICATIONS
• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• Dc-to-dc systems
• Increased power density systems
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRW M
VR
IF(AV)
IFM
IFSM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current Per Leg
(Rated VR)
Total Device
Peak Repetitive Forward Current (Rated
VR,
Square Wave,20kHz)
Per Diode Leg
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions half-
wave, single phase, 60Hz)
400
15
30
30
150
V
A
A
A
TJ Junction Temperature
-65~175 ℃
Tstg Storage Temperature Range
isc website：www.iscsemi.cn
-65~175 ℃
1
Product Specification
MUR3040PT
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MUR3040PT.PDF ] | |
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