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PDF SMC2333 Data sheet ( Hoja de datos )

Número de pieza SMC2333
Descripción P-Channel Enhancement Mode MOSFET
Fabricantes Semtron 
Logotipo Semtron Logotipo



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No Preview Available ! SMC2333 Hoja de datos, Descripción, Manual

SMC2333
DESCRIPTION
-20V P-Channel Enhancement Mode MOSFET
FEATURE
The SMC2333 is the P-Channel logic enhancement
mode power field effect transistor is produced using
high cell density. advanced trench technology to
provide excellent small package RDS(ON).
-20V/-6.0A, RDS(ON) =22m(typ)@VGS =-10V
-20V/-6.0A, RDS(ON) =26m(typ)@VGS =-4.5V
-20V/-3.5A, RDS(ON) =33m(typ)@VGS =-2.5V
-20V/-2.0A, RDS(ON) =43m(typ)@VGS =-1.8V
SMC2333S-TRG ROHS Compliant This is Halogen
Free
Super high density cell design for extremely low
RDS(ON)
Exceptional on-resistance and maximum DC
current capability
FEATURE
High Frequency Point-of-Load Synchronous
Small power switching for MB/NB/UMPC/VGA
DC/DC Converter
Load Switch
PIN CONFIGURATION
Drain
Source
Gate
SOT-23L
Top View
PART NUMBER INFORMATION
SMC 2333 S - TR G
a b c de
D
G
S
a : Company name.
b : Product Serial number.
c : Package code
d : Handling code
e : Green produce code
SMC2333 Rev.1.1
Copyright © Semtron Microtech Corp.
1
www.semtron-micro.com

1 page




SMC2333 pdf
SMC2333
TYPICAL CHARACTERISTICS (25Unless Note)
Capacitance
3000
2500
Ciss
2000
1500
1000
500
Crs s
0
04
Coss
8 12 16
-VDS-Drain Source Voltage(V)
20
Source Drain Diode Forward
10
125°C
25°C
1
0.1
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
-VSD-Source Drain Voltage(V)
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Power Dissipation
20 40 60 80 100 120 140 160
TJ-Junction Temperature(°C)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
Drain Current
20 40 60 80 100 120 140 160
TJ-Junction Temperature(°C)
Thermal Transient Impedance
10
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01
1
0.1
0.01
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration(Sec)
100 1000
SMC2333 Rev.1.1
Copyright © Semtron Microtech Corp.
5
www.semtron-micro.com

5 Page










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