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TSP10N60C の電気的特性と機能

TSP10N60CのメーカーはThinki Semiconductorです、この部品の機能は「600V Heatsink N-Channel Type Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 TSP10N60C
部品説明 600V Heatsink N-Channel Type Power MOSFET
メーカ Thinki Semiconductor
ロゴ Thinki Semiconductor ロゴ 




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TSP10N60C Datasheet, TSP10N60C PDF,ピン配置, 機能
TSP10N60C
®
TSP10N60C
Pb Free Plating Product
Pb
10.3A,600V Heatsink N-Channel Type Power MOSFET
Features
RDS(on) (Max 0.75 )@VGS=10V
Gate Charge (Typical 45nC)
Improved dv/dt Capability
High ruggedness
100% Avalanche Tested
1. Gate {
{ 2. Drain
◀▲
{ 3. Source
BVDSS = 600V
RDS(ON) = 0.75 ohm
ID = 10.3A
General Description
This N-channel enhancement mode field-effect power transistor
using THINKI Semiconductor advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220 pkg is well suited for
adaptor power unit and small power inverter application.
Absolute Maximum Ratings
TO-220
23
1
Symbol
Parameter
VDSS
ID
Drain to Source Voltage
Continuous Drain Current(@TC = 25 °C)
Continuous Drain Current(@TC = 100 °C)
IDM
VGS
EAS
EAR
dv/dt
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
PD
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
TSTG, TJ
Operating Junction Temperature & Storage Temperature
TL
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Value
TSP10N60C TSF10N60C
600
Units
V
10.3
10.3*
A
6.5 6.5* A
(Note 1)
(Note 2)
(Note 1)
(Note 3)
41.2
41.2*
±30
822
15.8
5.0
A
V
mJ
mJ
V/ns
158 57 W
1.27
0.45
W/°C
- 55 ~ +150
°C
300 °C
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Maximum value
TSP10N60C TSF10N60C
0.79
2.21
62.5
62.5
Units
°C/W
°C/W
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/7
http://www.thinkisemi.com/

1 Page





TSP10N60C pdf, ピン配列
TSP10N60C
®
Fig 1. On-State Characteristics
VGS
Top : 15.0 V
10.0 V
9.0 V
101
8.0 V
7.0 V
Bottom : 5.5 V
100
10-1
10-1
*. Notes :
1. 250uss Pulse Test
2. TC = 25OC
100 101
VDS, Drain-Source Voltage [V]
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
2.0
1.5
VGS = 10V
1.0
VGS = 20V
0.5
* Note : TJ = 25oC
0.0
0
5 10 15
ID, Drain Current [A]
Fig 5. Capacitance Characteristics
( Non-Repetitive )
20
4000
3500
3000
2500
2000
Ciss
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
*. Notes :
1. V = 0V
GS
2. f=1MHz
1500
1000
500
Coss
Crss
0 5 10 15 20 25 30 35 40
VDS, Drain-Source Voltage [V]
Fig 2. Transfer Characteristics
101
100
10-1
2
150oC
25oC
-55oC
*. Notes :
1. VDS = 50V
2. 250us Pulse Test
3 4 5 6 7 8 9 10
VGS, Gate-Source Voltage [V]
Fig 4. On State Current vs.
Allowable Case Temperature
101
150oC
25oC
100
10-1
0.2
*. Notes :
1. VGS = 0V
2. 250us Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-Drain voltage [V]
Fig 6. Gate Charge Characteristics
1.6
12
10 VDS = 120V
VDS = 300V
8 VDS = 480V
6
4
2
*. Note : I = 5.15 A
D
0
0 5 10 15 20 25 30 35 40 45 50
QG, Total Gate Charge [nC]
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 3/7
http://www.thinkisemi.com/


3Pages


TSP10N60C 電子部品, 半導体
TSP10N60C
®
Fig. 12. Gate Charge Test Circuit & Waveforms
12V 200nF 50KO
Same Type
as DUT
VGS
300nF
VGS
VDS
Qgs
DUT
1mA
Qg
Qgd
Charge
Fig 13. Switching Time Test Circuit & Waveforms
VDS
10V
Pulse
RG
Generator
RL
VDD
(0.5 rated VDS)
DUT
VDS 90%
Vin 10%
td(on)
tr
ton
td(off)
tf
toff
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
10V
VDS
ID
RG
L
DUT
VDD
1 BVDSS
EAS = LL IAS2
2 BVDSS - VDD
BVDSS
IAS
ID(t)
tp
VDS(t)
Time
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 6/7
http://www.thinkisemi.com/

6 Page



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共有リンク

Link :


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