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PDF BUL44G Data sheet ( Hoja de datos )
| Número de pieza | BUL44G | |
| Descripción | NPN Bipolar Power Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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BUL44G
SWITCHMODEt NPN
Bipolar Power Transistor
For Switching Power Supply Applications
The BUL44G have an applications specific state−of−the−art die
designed for use in 220 V line operated Switchmode Power supplies
and electronic light ballasts.
Features
• Improved Efficiency Due to Low Base Drive Requirements:
High and Flat DC Current Gain hFE
Fast Switching
No Coil Required in Base Circuit for Turn−Off (No Current Tail)
• Full Characterization at 125°C
• Tight Parametric Distributions are Consistent Lot−to−Lot
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak (Note 1)
Base Current
− Continuous
− Peak (Note 1)
Total Device Dissipation @ TC = 25_C
Derate above 25°C
Symbol
VCEO
VCES
VEBO
IC
ICM
IB
IBM
PD
Value
400
700
9.0
2.0
5.0
1.0
2.0
50
0.4
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/_C
Operating and Storage Temperature
THERMAL CHARACTERISTICS
TJ, Tstg −65 to 150 _C
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
2.5 _C/W
Thermal Resistance, Junction−to−Ambient RqJA
62.5 _C/W
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
TL
260 _C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
http://onsemi.com
POWER TRANSISTOR
2.0 AMPERES, 700 VOLTS,
40 AND 100 WATTS
123
TO−220AB
CASE 221A−09
STYLE 1
MARKING DIAGRAM
BUL44G
AY WW
BUL44
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
BUL44G
TO−220
(Pb−Free)
50 Units / Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 7
1
Publication Order Number:
BUL44/D
1 page  
BUL44G
300
IB(off) = IC/2
250 VCC = 300 V
PW = 20 ms
200
150
IC/IB = 5
100
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
6.0
IC/IB = 10
5.0 IC/IB = 5
4.0
3.0
2.0
IB(off) = IC/2
VCC = 300 V
PW = 20 ms
TJ = 25°C
TJ = 125°C
50 TJ = 25°C
TJ = 125°C
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
IC, COLLECTOR CURRENT (AMPS)
Figure 7. Resistive Switching, ton
1.0
0
0.2
IC/IB = 10
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
IC, COLLECTOR CURRENT (AMPS)
Figure 8. Resistive Switching, toff
2.0
2500
IC/IB = 5
2000
1500
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
1000
500
0
0.4
TJ = 25°C
TJ = 125°C
0.8 1.2
IC/IB = 10
1.6 2.0
2.4
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Inductive Storage Time, tsi
2.0
TJ = 25°C
TJ = 125°C
IB(off) = IC/2
VCC = 15 V
1.5
VZ = 300 V
LC = 200 mH
IC = 1 A
1.0
IC = 0.4 A
0.5
5.0 6.0 7.0 8.0 9.0 10 11 12 13 14
hFE, FORCED GAIN
Figure 10. Inductive Storage Time
15
250
200
tc
150
tfi
200
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
150
tc
100
IB(off) = IC/2
50 VCC = 15 V
VZ = 300 V
LC = 200 mH
0
0.4 0.8
1.2
TJ = 25°C
TJ = 125°C
1.6 2.0 2.4
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Inductive Switching,
tc and tfi IC/IB = 5
100
50
0.4
tfi
TJ = 25°C
TJ = 125°C
0.8 1.2 1.6 2.0
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Inductive Switching,
tc and tfi IC/IB = 10
2.4
http://onsemi.com
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BUL44G.PDF ] | |
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