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2SK3758 データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 2SK3758
部品説明 Silicon N Channel MOS Type Field Effect Transistor
メーカ Toshiba Semiconductor
ロゴ Toshiba Semiconductor ロゴ 

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2SK3758 Datasheet, 2SK3758 PDF,ピン配置, 機能
2SK3758
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS )
2SK3758
Switching Regulator Applications
unit
Low drain-source ON resistance: RDS (ON) = 1.35 (typ.)
High forward transfer admittance: |Yfs| = 3.5S (typ.)
Low leakage current: IDSS = 100 A (VDS = 500 V)
Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)
/Circuit
Maximum Ratings (Ta = 25°C)
3.84 0.2
3.84 0.2
101.05.5mmaax x
44..77mmaxax
1.3
1.3
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
ID P
PD
EA S
IAR
EAR
Tc h
Tstg
Rating
500
500
±30
5
20
58
12
5
5.8
150
-55~150
Unit
V
V
V
W
mJ
A
mJ
°C
°C
11..55mmaxax
0.81
0.81 max
00..4455
2.25.544
123
2.7
2.7
1. Gate
2. Drain(HEAT SINK)
3. Source
JEDEC
SC-46
JEITA
TO-220AB
Thermal Characteristics
TOSHIBA
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
Rth (ch-c)
Rth (ch-a)
Max Unit
2.16 °C/W
83.3 °C/W
Weight : 2.0g(typ.)
2
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 0.82 mH, IAR = 5 A, RG = 25
1
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
3
1 2004-02-26

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