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PDF IRFZ40FI Data sheet ( Hoja de datos )

Número de pieza IRFZ40FI
Descripción N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Fabricantes STMicroelectronics　
Logotipo STMicroelectronics Logotipo



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No Preview Available ! IRFZ40FI Hoja de datos, Descripción, Manual

IRFZ40
IRFZ40FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE
IRFZ40
IRFZ40FI
VDSS
50 V
50 V
R DS( on)
< 0.028 Ω
< 0.028 Ω
ID
50 A
27 A
s TYPICAL RDS(on) = 0.022 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
3
2
1
TO-220
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VD S Drain-source Voltage (VGS = 0)
VDG R Drain- gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID Drain Current (cont.) at Tc = 25 oC
ID Drain Current (cont.) at Tc = 100 oC
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
July 1993
Value
IRFZ40
IRFZ40FI
50 50
50 50
± 20
50 27
35 19
200 200
150 45
1 0.3
2000
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/9

1 page




IRFZ40FI pdf
Transconductance
IRFZ40/FI
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
5/9

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