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PDF IRFPC40 Data sheet ( Hoja de datos )
| Número de pieza | IRFPC40 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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Power MOSFET
IRFPC40, SiHFPC40
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
600
VGS = 10 V
60
8.3
30
Single
1.2
TO-247
D
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole. It also provides greater creepage distance between
pins to meet the requirements of most safety specifications.
TO-247
IRFPC40PbF
SiHFPC40-E3
IRFPC40
SiHFPC40
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
VGS
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
EAS
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 16 mH, RG = 25 Ω, IAS = 6.8 A (see fig. 12).
c. ISD ≤ 6.8 A, dI/dt ≤ 80 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91240
S-Pending-Rev. A, 26-Jun-08
WORK-IN-PROGRESS
LIMIT
600
± 20
6.8
4.3
27
1.2
410
150
3.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
W
V/ns
°C
lbf · in
N·m
www.vishay.com
1
1 page  
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRFPC40, SiHFPC40
Vishay Siliconix
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91240
S-Pending-Rev. A, 26-Jun-08
www.vishay.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFPC40.PDF ] | |
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