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Número de pieza | IRF841 | |
Descripción | N-Channel MOSFET Transistor | |
Fabricantes | Inchange Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRF841 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF841
FEATURES
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
·Rugged Gate Oxide Technology
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
450
±20
V
V
ID Drain Current-Continuous
8A
IDM Drain Current-Single Pluse
32 A
PD Total Dissipation @TC=25℃
125 W
TJ
Max. Operating Junction Temperature
-55~150 ℃
Tstg Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX UNIT
1 ℃/W
80 ℃/W
isc website:www.iscsemi.cn
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Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet IRF841.PDF ] |
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