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PDF IRF630PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF630PBF | |
| Descripción | N-Channel Type Power MOSFET | |
| Fabricantes | Thinki Semiconductor | |
| Logotipo |  |
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IRF630PBF
®
IRF630PBF
Pb Free Plating Product
Pb
9A,200V Heatsink N-Channel Type Power MOSFET
Features
̰ RDS(on) (Max 0.4 ˟ )@VGS=10V
̰ Gate Charge (Typical 44nC)
̰ Improved dv/dt Capability
̰ High ruggedness
̰ 100% Avalanche Tested
1.Gate
2.Drain
3.Source
BVDSS = 200V
RDS(ON) = 0.4 ohm
ID = 9A
General Description
This N-channel enhancement mode field-effect power transistor
using THINKI Semiconductor advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220C pkg is well suited for
adaptor power unit and small power inverter application.
TO-220C
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RTJC
RTCS
RTJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
200
9
5.8
36
±30
180
7.8
5.5
78
0.62
- 55 ~ 150
300
Value
Typ.
-
0.5
-
Max.
1.61
-
62.5
23
1
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/6
http://www.thinkisemi.com/
1 page  
IRF630PBF
®
Fig. 12. Gate Charge Test Circuit & Waveforms
12V 200nF 50KO
Same Type
as DUT
VGS
300nF
VGS
VDS
Qgs
DUT
1mA
Qg
Qgd
Charge
Fig 13. Switching Time Test Circuit & Waveforms
VDS
10V
Pulse
RG
Generator
RL
VDD
(0.5 rated VDS)
DUT
VDS 90%
10%
Vin
td(on)
tr
ton
td(off)
tf
toff
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
10V
VDS
ID
RG
L
DUT
VDD
1 BVDSS
EAS = LL IAS2
2 BVDSS - VDD
BVDSS
IAS
ID(t)
tp
VDS(t)
Time
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 5/6
http://www.thinkisemi.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IRF630PBF.PDF ] | |
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