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IRF3205 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRF3205
部品説明 N-Channel Trench Process Power MOSFET Transistor
メーカ Thinki Semiconductor
ロゴ Thinki Semiconductor ロゴ 



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IRF3205 Datasheet, IRF3205 PDF,ピン配置, 機能
IRF3205
®
Pb Free Plating Product
IRF3205
Pb
N-Channel Trench Process Power MOSFET Transistor
General Description
The IRF3205 is N-channel MOS Field Effect Transistor
designed for high current switching applications. Rugged
EAS capability and ultra low RDS(ON) is suitable for PWM,
load switching .
Features
VDS=55V; ID=105A@ VGS=10V;
RDS(ON)<6.0mΩ @ VGS=10V
Ultra Low On-Resistance
High UIS and UIS 100% Test
Application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Inverter Application
G DS
TO-220CB Top View
Schematic Diagram
VDS = 55 V
ID = 105 A
RDS(ON) = 5.0 m
Table 1. Absolute Maximum Ratings (TA=25)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V)
VGS Gate-Source Voltage (VDS=0V)
ID (DC)
ID (DC)
IDM (pluse)
Drain Current (DC) at Tc=25
Drain Current (DC) at Tc=100
Drain Current-Continuous@ Current-Pulsed (Note 1)
dv/dt
Peak Diode Recovery Voltage
PD Maximum Power Dissipation(Tc=25)
Derating Factor
EAS Single Pulse Avalanche Energy (Note 2)
TJ,TSTG
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:TJ=25,VDD=40V,VBGB=10V,RG=25Ω
Value
55
±25
105
100
420
30
139
0.926
625
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/
mJ
Rev.05
© 2013 Thinki Semiconductor Co.,Ltd.
Page 1/5
http://www.thinkisemi.com/

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