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IRFP350のメーカーはFairchild Semiconductorです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRFP350 |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとIRFP350ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
$GYDQFHG 3RZHU 026)(7
IRFP350
FEATURES
♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
♦ Lower Input Capacitance
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V
♦ Low RDS(ON): 0.254Ω (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (TC=25°C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
BVDSS = 400 V
RDS(on) = 0.3Ω
ID = 17 A
TO-3P
1
2
3
1.Gate 2. Drain 3. Source
Value
400
17
10.8
68
±30
1156
17
20.2
4.0
202
1.61
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Typ.
--
0.24
--
Max.
0.62
--
40
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
1 Page 1&+$11(/
32:(5 026)(7
Fig 1. Output Characteristics
VGS
Top : 15V
10 V
8.0 V
7.0 V
101 6.0 V
5.5 V
5.0 V
Bottom : 4.5V
100
10-110-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
0.60
0.45 VGS =10 V
0.30
0.15
0.00
0
VGS =20 V
@ Note :TJ =25 oC
10 20 30 40 50 60 70
ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
4000
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
3000
C iss
2000
C oss
1000
C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
VDS , Drain-Source Voltage [V]
IRFP350
Fig 2. Transfer Characteristics
101
150 oC
100
25 oC
10-1
2
- 55 oC
@ Notes :
1. VGS = 0 V
2. VDS = 50 V
3. 250 µs Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
10-1
0.2
150 oC
25 oC
@Notes :
1. VGS =0 V
2. 250µsPulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source Voltage
VDS = 80 V
10
VDS = 200 V
VDS = 320 V
5
@ Notes : ID = 17.0 A
0
0 20 40 60 80 100 120
QG , Total Gate Charge [nC]
3Pages IRFP350
1&+$11(/
32:(5 026)(7
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
IS
VGS Driver
RG
VGS
+
VDS
--
L
Same Type
as DUT
dv/dt controlled by RG
IS controlled by Duty Factor D
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
Gate Pulse Width
D
=
--------------------------
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
6 Page | |||
ページ | 合計 : 7 ページ | ||
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PDF ダウンロード | [ IRFP350 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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