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IRFIZ34A の電気的特性と機能

IRFIZ34AのメーカーはFairchild Semiconductorです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFIZ34A
部品説明 Power MOSFET ( Transistor )
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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IRFIZ34A Datasheet, IRFIZ34A PDF,ピン配置, 機能
$GYDQFHG 3RZHU 026)(7
IRFW/IZ34A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175°C Operating Temperature
Lower Leakage Current: 10µA (Max.) @ VDS = 60V
Lower RDS(ON): 0.030(Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25°C) *
Total Power Dissipation (TC=25°C)
Linear Derating Factor
(3)
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
BVDSS = 60 V
RDS(on) = 0.04
ID = 30 A
D2-PAK I2-PAK
2
1
3
1
2
3
1. Gate 2. Drain 3. Source
Value
60
30
21.2
120
±20
463
30
7.7
5.5
3.8
77
0.52
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
1.94
40
62.5
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation

1 Page





IRFIZ34A pdf, ピン配列
1&+$11(/
32:(5 026)(7
Fig 1. Output Characteristics
102 VGS
Top : 15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5V
101
10100-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100
VDS , Drain-Source Voltage [V]
101
Fig 3. On-Resistance vs. Drain Current
0.05
0.04 VGS =10 V
0.03
0.02
0.01
0
VGS =20 V
@ Note :TJ =25oC
25 50 75 100
ID , Drain Current [A]
125
Fig 5. Capacitance vs. Drain-Source Voltage
2000
C iss
1500
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
C oss
1000
C rss
500
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
VDS , Drain-Source Voltage [V]
IRFW/IZ34A
Fig 2. Transfer Characteristics
102
101
175 oC
100 25 oC
10-1
2
- 55 oC
@ Notes :
1. VGS = 0 V
2. VDS = 30 V
3. 250 µs Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
102
101
175 oC
25 oC
@Notes :
1. VGS =0 V
2. 250µsPulse Test
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
VSD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source Voltage
VDS = 12 V
10
VDS = 30 V
VDS = 48 V
5
@ Notes : ID = 30.0 A
0
0 10 20 30 40 50
QG , Total Gate Charge [nC]


3Pages


IRFIZ34A 電子部品, 半導体
IRFW/IZ34A
1&+$11(/
32:(5 026)(7
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
IS
VGS Driver
RG
VGS
+
VDS
--
L
Same Type
as DUT
dv/dt controlled by RG
IS controlled by Duty Factor D
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
Gate Pulse Width
D
=
--------------------------
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD

6 Page



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共有リンク

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