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IRFIZ24A の電気的特性と機能

IRFIZ24AのメーカーはSamsungです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFIZ24A
部品説明 Power MOSFET ( Transistor )
メーカ Samsung
ロゴ Samsung ロゴ 




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IRFIZ24A Datasheet, IRFIZ24A PDF,ピン配置, 機能
Advanced Power MOSFET
IRFW/IZ24A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175¡ ÉOperating Temperature
Lower Leakage Current : 10 µA (Max.) @ VDS = 60V
Lower RDS(ON) : 0.050 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC )
Continuous Drain Current (TC=100oC )
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25oC )*
Total Power Dissipation (TC=25oC )
Linear Derating Factor
O2
O1
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
BVDSS = 60 V
RDS(on) = 0.07
ID = 17 A
D2-PAK I2-PAK
2
1
3
1
2
3
1. Gate 2. Drain 3. Source
Value
60
17
12
68
+_ 20
149
17
4.4
5.5
3.8
44
0.29
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/oC
oC
Thermal Resistance
Symbol
Characteristic
Typ.
R θ JC
R θ JA
R θ JA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
3.43
40
62.5
Units
oC /W

1 Page





IRFIZ24A pdf, ピン配列
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
VGS
Top : 15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
101 Bottom : 4.5 V
100
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
0.100
0.075
VGS = 10 V
0.050
0.025
0.000
0
VGS = 20 V
@ Note : TJ = 25 oC
20 40 60
ID , Drain Current [A]
80
Fig 5. Capacitance vs. Drain-Source Voltage
1200
C iss
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
800 C oss
400 C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
VDS , Drain-Source Voltage [V]
IRFW/IZ24A
Fig 2. Transfer Characteristics
101
175 oC
100
25 oC
10-1
2
- 55 oC
@ Notes :
1. VGS = 0 V
2. VDS = 30 V
3. 250 µs Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
175 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
10-1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VSD , Source-Drain Voltage [V]
2.6
Fig 6. Gate Charge vs. Gate-Source Voltage
VDS = 12 V
10
VDS = 30 V
VDS = 48 V
5
@ Notes : ID = 17.0 A
0
0 5 10 15 20 25
QG , Total Gate Charge [nC]


3Pages


IRFIZ24A 電子部品, 半導体
IRFW/IZ24A
N-CHANNEL
POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
IS
VGS Driver
RG
VGS
+
VDS
--
L
Same Type
as DUT
•dv/dt controlled by “RG
•IS controlled by Duty Factor “D”
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a-t-e--P--u-l-s-e---W--i-d--t-h----
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD

6 Page



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共有リンク

Link :


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IRFIZ24A

Power MOSFET ( Transistor )

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