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IRF840A の電気的特性と機能

IRF840AのメーカーはVishayです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF840A
部品説明 Power MOSFET ( Transistor )
メーカ Vishay
ロゴ Vishay ロゴ 




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IRF840A Datasheet, IRF840A PDF,ピン配置, 機能
Power MOSFET
IRF840A, SiHF840A
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
38
9.0
18
Single
0.85
TO-220AB
D
S
D
G
G
S
N-Channel MOSFET
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
Available
• Improved Gate, Avalanche and Dynamic dV/dt RoHS*
Ruggedness
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective Coss Specified
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
• Half Bridge
• Full Bridge
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220AB
IRF840APbF
SiHF840A-E3
IRF840A
SiHF840A
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 16 mH, Rg = 25 , IAS = 8.0 A (see fig. 12).
c. ISD 8.0 A, dI/dt 100 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
500
± 30
8.0
5.1
32
1.0
510
8.0
13
125
5.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91065
S11-0506-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





IRF840A pdf, ピン配列
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF840A, SiHF840A
Vishay Siliconix
102
Top
VGS
15 V
10 V
8.0 V
7.0 V
10 6.0 V
5.5 V
5.0 V
Bottom 4.5 V
1
4.5 V
0.1
0.1
91065_01
20 µs Pulse Width
TC = 25 °C
1 10 102
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
102
10 TJ = 150 °C
TJ = 25 °C
1
0.1
4.0
91065_03
20 µs Pulse Width
VDS = 50 V
5.0 6.0 7.0 8.0 9.0
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
102
Top
VGS
15 V
10 V
8.0 V
7.0 V
10 6.0 V
5.5 V
5.0 V
Bottom 4.5 V
1
4.5 V
0.1
0.1
91065_02
20 µs Pulse Width
TC = 150 °C
1 10 102
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
3.0
ID = 8.0 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91065_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91065
S11-0506-Rev. B, 21-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


IRF840A 電子部品, 半導体
IRF840A, SiHF840A
Vishay Siliconix
VDS
Vary tp to obtain
required IAS
RG
10 V
tp
L
D.U.T
IAS
0.01 Ω
+
- VDD
Fig. 12a - Unclamped Inductive Test Circuit
VDS
VDS
tp
VDD
IAS
Fig. 12b - Unclamped Inductive Waveforms
1200
1000
800
Top
Bottom
ID
3.6 A
5.1 A
8.0 A
600
400
200
0
25
91065_12c
50 75 100 125
Starting TJ, Junction Temperature (°C)
150
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig. 12d - Basic Gate Charge Waveform
600
580
560
540
520
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
91065_12d
IAV, Avalanche Current (A)
Fig. 13a - Typical Drain-to-Source Voltage vs.
Avalanche Current
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
www.vishay.com
6
Document Number: 91065
S11-0506-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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