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PDF MPSW01 Data sheet ( Hoja de datos )
| Número de pieza | MPSW01 | |
| Descripción | One Watt High Current Transistors | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MPSW01, MPSW01A
One Watt High Current
Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
VCEO
Vdc
MPSW01
30
MPSW01A
40
Collector −Base Voltage MPSW01 VCBO 40 Vdc
MPSW01A
50
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VEBO
IC
PD
5.0
1000
1.0
8.0
Vdc
mAdc
W
mW/°C
Total Device Dissipation @ TC = 25°C PD 2.5 W
Derate above 25°C
20 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
125 °C/W
Thermal Resistance, Junction−to−Case
RqJC
50 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
123
STRAIGHT LEAD
BULK PACK
12 3
TO−92 1 WATT
(TO−226)
CASE 29−10
STYLE 1
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
MPS
W01x
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
August, 2010 − Rev. 6
1
x = 01A Devices
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
MPSW01/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MPSW01.PDF ] | |
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