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IRLR220 の電気的特性と機能

IRLR220のメーカーはFairchild Semiconductorです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRLR220
部品説明 Power MOSFET ( Transistor )
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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IRLR220 Datasheet, IRLR220 PDF,ピン配置, 機能
$GYDQFHG 3RZHU 026)(7
IRLR220
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10µA (Max.) @ VDS = 200V
Lower RDS(ON): 0.609(Typ.)
BVDSS = 200 V
RDS(on) = 0.8
ID = 4.6 A
D-PAK I-PAK
2
11
3
2
3
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25°C) *
Total Power Dissipation (TC=25°C)
Linear Derating Factor
(3)
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
1. Gate 2. Drain 3. Source
Value
200
4.6
2.9
16
±20
28
4.6
3.3
5
2.5
33
0.26
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
3.7
50
110
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
1

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IRLR220 pdf, ピン配列
1&+$11(/
32:(5 026)(7
Fig 1. Output Characteristics
101 Top :
V
GS
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
4.0 V
3.5 V
100 Bottom : 3.0V
10-1
10-1
@ Notes :
1. 250 µs Pulse Test
2. T = 25 oC
C
100 101
V , Drain-Source Voltage [V]
DS
Fig 3. On-Resistance vs. Drain Current
2.0
1.5
VGS = 5 V
1.0
0.5
VGS = 10 V
@ Note : TJ = 25 oC
0.0
0 3 6 9 12 15 18
ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
500
400 C iss
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
300
200 C oss
100 C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
VDS , Drain-Source Voltage [V]
IRLR220
Fig 2. Transfer Characteristics
101
150 oC
100
25 oC
10-1
0
- 55 oC
@ Notes :
1. VGS = 0 V
2. VDS = 40 V
3. 250 µs Pulse Test
2468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
150 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
10-1
0.4
0.6 0.8 1.0 1.2 1.4 1.6
VSD , Source-Drain Voltage [V]
1.8
Fig 6. Gate Charge vs. Gate-Source Voltage
6
V = 40 V
DS
V = 100 V
DS
V = 160 V
DS
4
2
@ Notes : I = 5 A
D
0
0 2 4 6 8 10 12
Q , Total Gate Charge [nC]
G
3


3Pages


IRLR220 電子部品, 半導体
IRLR220
1&+$11(/
32:(5 026)(7
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
IS
VGS Driver
RG
VGS
+
VDS
--
L
Same Type
as DUT
dv/dt controlled by RG
IS controlled by Duty Factor D
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
Gate Pulse Width
D = --------------------------
Gate Pulse Period
5V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
6

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRLR220

Power MOSFET ( Transistor )

Fairchild Semiconductor
Fairchild Semiconductor
IRLR220A

ADVANCED POWER MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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