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PDF IRFS7534-7PPbF Data sheet ( Hoja de datos )

Número de pieza IRFS7534-7PPbF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRFS7534-7PPbF Hoja de datos, Descripción, Manual

Application
 Brushed motor drive applications
 BLDC motor drive applications
 Battery powered circuits
 Half-bridge and full-bridge topologies
 Synchronous rectifier applications
 Resonant mode power supplies
 OR-ing and redundant power switches
 DC/DC and AC/DC converters
 DC/AC inverters
StrongIRFET™
IRFS7534-7PPbF
HEXFET® Power MOSFET
 D
VDSS
60V
RDS(on) typ.
1.60m
G
max
1.95m
ID (Silicon Limited)
255A
S
ID (Package Limited)
240A
Benefits
 Improved gate, avalanche and dynamic dV/dt ruggedness
 Fully characterized capacitance and avalanche SOA
 Enhanced body diode dV/dt and dI/dt capability
 Lead-free, RoHS compliant
G
Gate
D
Drain
S
Source
Base Part Number
IRFS7534-7PPbF
Package Type
D2Pak-7PIN
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Complete Part Number
IRFS7534-7PPbF
IRFS7534TRL7PP
8
ID = 100A
6
4 TJ = 125°C
2
TJ = 25°C
0
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
300
Limited By Package
250
200
150
100
50
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
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IRFS7534-7PPbF pdf
 
1000
100 TJ = 175°C
10
TJ = 25°C
1
0.1
0.0
VGS = 0V
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-to-Drain Voltage (V)
1.6
Fig 9. Typical Source-Drain Diode Forward Voltage
78
Id = 1.0mA
76
74
72
70
68
66
64
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 11. Drain-to-Source Breakdown Voltage
4.0
Vgs = 5.5V
3.5 Vgs = 6.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
3.0
IRFS7534-7PPbF
100µsec
1msec
100 Limited by
package
OPERATION
10 IN THIS
AREA
LIMITED BY
RDS(on)
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1 1
10msec
DC
10
VDS, Drain-toSource Voltage (V)
Fig 10. Maximum Safe Operating Area
1.6
1.2
0.8
0.4
0.0
-10 0 10 20 30 40 50 60
VDS, Drain-to-Source Voltage (V)
Fig 12. Typical Coss Stored Energy
2.5
2.0
5 www.irf.com
1.5
0 20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
© 2013 International Rectifier
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November 5, 2014

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IRFS7534-7PPbF arduino
  IRFS7534-7PPbF
Qualification Information 
Qualification Level  
Moisture Sensitivity Level
RoHS Compliant
D2Pak-7Pin
Industrial
(per JEDEC JESD47F) ††
MSL1
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
11/5/2014


Comments
Updated EAS (L =1mH) = 773mJ on page 2
Updated note 9 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 39A, VGS =10V” on page 2
11 www.irf.com
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
© 2013 International Rectifier
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November 5, 2014

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