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IRL640SのメーカーはFairchild Semiconductorです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRL640S |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとIRL640Sダウンロード(pdfファイル)リンクがあります。 Total 7 pages
$GYDQFHG 3RZHU 026)(7
IRL640S
FEATURES
♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
♦ Lower Input Capacitance
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ 150°C Operating Temperature
♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V
♦ Lower RDS(ON): 0.145Ω (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25°C) *
Total Power Dissipation (TC=25°C)
Linear Derating Factor
(3)
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
BVDSS = 200 V
RDS(on) = 0.18Ω
ID = 18 A
D2-PAK I2-PAK
2
1
3
1
2
3
1. Gate 2. Drain 3. Source
Value
200
18
11.4
63
±20
64
18
11
5
3.1
110
0.88
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
1.14
40
62.5
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
1
1 Page 1&+$11(/
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Fig 1. Output Characteristics
V
GS
Top : 7.0V
6.0 V
5.5 V
5.0 V
4.5 V
101 4.0V
3.5 V
Bottom : 3.0V
100
10-1
@ Notes :
1. 250 µs Pulse Test
2. T = 25 oC
C
100 101
V , Drain-Source Voltage [V]
DS
Fig 3. On-Resistance vs. Drain Current
0.4
0.3 V = 5 V
GS
0.2
0.1 V = 10 V
GS
@ Note : T = 25 oC
J
0.0
0 20 40 60 80
I , Drain Current [A]
D
Fig 5. Capacitance vs. Drain-Source Voltage
2000
C iss
1600
Ciss= Cgs+ Cgd (Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
1200
800 C oss
400 C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
VDS , Drain-Source Voltage [V]
IRL640S
Fig 2. Transfer Characteristics
101
150 oC
100
25 oC
10-1
0
- 55 oC
@ Notes :
1. VGS = 0 V
2. VDS = 40 V
3. 250 µs Pulse Test
2468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
150 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
10-1
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD , Source-Drain Voltage [V]
2.0
Fig 6. Gate Charge vs. Gate-Source Voltage
6
VDS = 40 V
VDS = 100 V
VDS = 160 V
4
2
@ Notes : ID = 18 A
0
0 10 20 30 40
QG , Total Gate Charge [nC]
3
3Pages IRL640S
1&+$11(/
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Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
IS
VGS Driver
RG
VGS
+
VDS
--
L
Same Type
as DUT
dv/dt controlled by RG
IS controlled by Duty Factor D
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
Gate Pulse Width
D = --------------------------
Gate Pulse Period
5V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
6
6 Page | |||
ページ | 合計 : 7 ページ | ||
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PDF ダウンロード | [ IRL640S データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRL640 | Power MOSFET ( Transistor ) | Fairchild Semiconductor |
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