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IRFSZ14A PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFSZ14A
部品説明 Power MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 



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IRFSZ14A Datasheet, IRFSZ14A PDF,ピン配置, 機能
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175¡É Operating Temperature
Lower Leakage Current : 10 µA (Max.) @ VDS = 60V
Lower RDS(ON) : 0.097 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC )
Continuous Drain Current (TC=100oC )
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O2
Avalanche Current
Repetitive Avalanche Energy
O1
O1
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25oC )
Linear Derating Factor
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
IRFSZ14A
BVDSS = 60 V
RDS(on) = 0.14
ID = 8 A
TO-220F
2
3
1.Gate 2. Drain 3. Source
Value
60
8
5.6
40
+_ 20
55
8
1.9
5.5
19
0.13
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ oC
oC
Thermal Resistance
Symbol
R θJC
R θJA
Characteristic
Junction-to-Case
Junction-to-Ambient
©1999 Fairchild Semiconductor Corporation
Typ.
--
--
Max.
7.89
62.5
Units
oC /W
Rev. B

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