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IRFS610A データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 IRFS610A
部品説明 Power MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 
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IRFS610A Datasheet, IRFS610A PDF,ピン配置, 機能
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.) @ VDS = 200V
Low RDS(ON) : 1.169 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 oC)
Continuous Drain Current (TC=100 oC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O2
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25 oC)
Linear Derating Factor
O1
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
IRFS610A
BVDSS = 200 V
RDS(on) = 1.5
ID = 2.5 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Value
200
2.5
1.6
10
+_ 30
42
2.5
2.2
5.0
22
0.18
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/oC
oC
Thermal Resistance
Symbol
RθJC
RθJA
Characteristic
Junction-to-Case
Junction-to-Ambient
©1999 Fairchild Semiconductor Corporation
Typ.
--
--
Max.
5.71
62.5
Units
oC/W
Rev. B

1 Page



IRFS610A pdf, ピン配列
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
101
VGS
Top : 15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
100 Bottom : 4.5 V
10-1
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
4
VGS = 10 V
3
2
1
VGS = 20 V
@ Note : TJ = 25 oC
0
0 2 4 6 8 10
ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
300
200 C iss
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
C oss
100
C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
VDS , Drain-Source Voltage [V]
IRFS610A
Fig 2. Transfer Characteristics
101
100
10-1
2
150 oC
25 oC
- 55 oC
@ Notes :
1. VGS = 0 V
2. V = 40 V
DS
3. 250 µs Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
150 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
10-1
0.4
0.6 0.8 1.0 1.2
VSD , Source-Drain Voltage [V]
1.4
Fig 6. Gate Charge vs. Gate-Source Voltage
VDS = 40 V
10
VDS = 100 V
VDS = 160 V
5
@ Notes : ID = 3.3 A
0
02468
QG , Total Gate Charge [nC]


3Pages


IRFS610A 電子部品, 半導体
IRFS610A
N-CHANNEL
POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
IS
VGS Driver
RG
VGS
+
VDS
--
L
Same Type
as DUT
•dv/dt controlled by “RG
•IS controlled by Duty Factor “D”
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a-t-e--P--u-l-s-e---W--i-d--t-h----
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD

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