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IRFS610A データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 IRFS610A
部品説明 Power MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 

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IRFS610A Datasheet, IRFS610A PDF,ピン配置, 機能
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.) @ VDS = 200V
Low RDS(ON) : 1.169 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 oC)
Continuous Drain Current (TC=100 oC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O2
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25 oC)
Linear Derating Factor
O1
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
IRFS610A
BVDSS = 200 V
RDS(on) = 1.5
ID = 2.5 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Value
200
2.5
1.6
10
+_ 30
42
2.5
2.2
5.0
22
0.18
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/oC
oC
Thermal Resistance
Symbol
RθJC
RθJA
Characteristic
Junction-to-Case
Junction-to-Ambient
©1999 Fairchild Semiconductor Corporation
Typ.
--
--
Max.
5.71
62.5
Units
oC/W
Rev. B

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