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HU50N06 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 HU50N06
部品説明 60V N-Channel MOSFET
メーカ HAOLIN
ロゴ HAOLIN ロゴ 



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HU50N06 Datasheet, HU50N06 PDF,ピン配置, 機能
Nov 2009
HD50N06 / HU50N06
60V N-Channel MOSFET
BVDSS = 60 V
RDS(on) = 22 mΩ
ID = 50 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 40 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 0.022 Ω (Typ.) @V GS=10V
100% Avalanche Tested
TO-252 TO-251
HD50N06
HU50N06
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
Continuous (TC = 25)
Continuous (TC = 100)
Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
60
50
35.4
200
±20
490
50
12
7.0
PD
TJ, TSTG
TL
Power Dissipation (TA = 25)*
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
3.75
120
0.8
-55 to +150
300
Thermal Resistance Characteristics
Symbol
Parameter
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient*
RθJA
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
1.0
40
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
Units
/W

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HU50N06

60V N-Channel MOSFET

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