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IS42VM32400E の電気的特性と機能

IS42VM32400EのメーカーはISSIです、この部品の機能は「128Mb Mobile Synchronous DRAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 IS42VM32400E
部品説明 128Mb Mobile Synchronous DRAM
メーカ ISSI
ロゴ ISSI ロゴ 




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IS42VM32400E Datasheet, IS42VM32400E PDF,ピン配置, 機能
IS42VM81600E / IS42VM16800E / IS42VM32400E
IS45VM81600E / IS45VM16800E / IS45VM32400E
16Mx8, 8Mx16, 4Mx32
128Mb Mobile Synchronous DRAM
FEATURES
• Fully synchronous; all signals referenced to a
positive clock edge
• Internal bank for hiding row access and pre-
charge
• Programmable CAS latency: 2, 3
• Programmable Burst Length: 1, 2, 4, 8, and Full
Page
• Programmable Burst Sequence:
• Sequential and Interleave
• Auto Refresh (CBR)
• TCSR (Temperature Compensated Self Refresh)
• PASR (Partial Arrays Self Refresh): 1/16, 1/8,
1/4, 1/2, and Full
• Deep Power Down Mode (DPD)
• Driver Strength Control (DS): 1/4, 1/2, and Full
OPTIONS
• Configurations: 16M x 8, 8M x 16, 4M x 32
• Power Supply
IS42VMxxx – Vdd/Vddq = 1.8 V
• Packages:
x8 / x16 –TSOP II (54), BGA (54) [x16 only]
x32 – TSOP II (86), BGA (90)
• Temperature Range:
Commercial (0°C to +70°C)
Industrial (–40 ºC to 85 ºC)
Automotive, A1 (–40 ºC to 85 ºC)
Automotive, A2 (–40 ºC to 105 ºC)
JUNE 2011
DESCRIPTION
ISSI's 128Mb Mobile Synchronous DRAM achieves high-
speed data transfer using pipeline architecture. All input
and output signals refer to the rising edge of the clock
input. Both write and read accesses to the SDRAM are
burst oriented. The 128Mb Mobile Synchronous DRAM
is designed to minimize current consumption making it
ideal for low-power applications. Both TSOP and BGA
packages are offered, including industrial grade products.
KEY TIMING PARAMETERS
Parameter
CLK Cycle Time
CAS Latency = 3
CAS Latency = 2
CLK Frequency
CAS Latency = 3
CAS Latency = 2
Access Time from CLK
CAS Latency = 3
CAS Latency = 2
-75
7.5
9.6
133
104
5.4
8.0
-10 Unit
10 ns
12 ns
100 Mhz
83 Mhz
8.0 ns
9.0 ns
ADDRESSING TABLE
Parameter
Configuration
Refresh Count
Row Addressing
Column Addressing
Bank Addressing
Precharge Addressing
16M x 8
4M x 8 x 4 banks
4K/64ms
A0-A11
A0-A9
BA0, BA1
A10
8M x 16
2M x 16 x 4 banks
4K/64ms
A0-A11
A0-A8
BA0, BA1
A10
4M x 32
1M x 32 x 4 banks
4K/64ms
A0-A11
A0-A7
BA0, BA1
A10
Copyright © 2011 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time with-
out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain
the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such ap-
plications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. - www.issi.com
Rev.  A
04/08/2011
1

1 Page





IS42VM32400E pdf, ピン配列
IS42VM81600E / IS42VM16800E / IS42VM32400E
IS45VM81600E / IS45VM16800E / IS45VM32400E
PIN CONFIGURATIONS
54 pin TSOP - Type II for x8
VDD
DQ0
VDDQ
NC
DQ1
VSSQ
NC
DQ2
VDDQ
NC
DQ3
VSSQ
NC
VDD
NC
WE
CAS
RAS
CS
BA0
BA1
A10
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54 VSS
53 DQ7
52 VSSQ
51 NC
50 DQ6
49 VDDQ
48 NC
47 DQ5
46 VSSQ
45 NC
44 DQ4
43 VDDQ
42 NC
41 VSS
40 NC
39 DQM
38 CLK
37 CKE
36 NC
35 A11
34 A9
33 A8
32 A7
31 A6
30 A5
29 A4
28 VSS
PIN DESCRIPTIONS: 16Mx8
A0-A11
A0-A9
BA0, BA1
DQ0 to DQ7
CLK
CKE
CS
RAS
CAS
Row Address Input
Column Address Input
Bank Select Address
Data I/O
System Clock Input
Clock Enable
Chip Select
Row Address Strobe Command
Column Address Strobe Command
WE
DQM
Vdd
Vss
Vddq
Vssq
NC
Write Enable
Data Input/Output Mask
Power
Ground
Power Supply for I/O Pin
Ground for I/O Pin
No Connection
Integrated Silicon Solution, Inc. - www.issi.com
Rev.  A
04/08/2011
3


3Pages


IS42VM32400E 電子部品, 半導体
IS42VM81600E / IS42VM16800E / IS42VM32400E
IS45VM81600E / IS45VM16800E / IS45VM32400E
PIN CONFIGURATIONS
86 pin TSOP - Type II for x32
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
NC
VDD
DQM0
WE
CAS
RAS
CS
A11
BA0
BA1
A10
A0
A1
A2
DQM2
VDD
NC
DQ16
VSSQ
DQ17
DQ18
VDDQ
DQ19
DQ20
VSSQ
DQ21
DQ22
VDDQ
DQ23
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
86 VSS
85 DQ15
84 VSSQ
83 DQ14
82 DQ13
81 VDDQ
80 DQ12
79 DQ11
78 VSSQ
77 DQ10
76 DQ9
75 VDDQ
74 DQ8
73 NC
72 VSS
71 DQM1
70 NC
69 NC
68 CLK
67 CKE
66 A9
65 A8
64 A7
63 A6
62 A5
61 A4
60 A3
59 DQM3
58 VSS
57 NC
56 DQ31
55 VDDQ
54 DQ30
53 DQ29
52 VSSQ
51 DQ28
50 DQ27
49 VDDQ
48 DQ26
47 DQ25
46 VSSQ
45 DQ24
44 VSS
PIN DESCRIPTIONS: 4Mx32
A0-A11
Row Address Input
A0-A7
Column Address Input
BA0, BA1
Bank Select Address
DQ0 to DQ31 Data I/O
CLK
System Clock Input
CKE
Clock Enable
CS
Chip Select
RAS
Row Address Strobe Command
CAS
Column Address Strobe Command
WE
DQM0-DQM3
Vdd
Vss
Vddq
Vssq
NC
Write Enable
x32 Input/Output Mask
Power
Ground
Power Supply for I/O Pin
Ground for I/O Pin
No Connection
6 Integrated Silicon Solution, Inc. - www.issi.com
Rev.  A
04/08/2011

6 Page



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部品番号部品説明メーカ
IS42VM32400E

128Mb Mobile Synchronous DRAM

ISSI
ISSI
IS42VM32400F

1M x 32Bits x 4Banks Mobile Synchronous DRAM

ISSI
ISSI
IS42VM32400G

1M x 32Bits x 4Banks Mobile Synchronous DRAM

ISSI
ISSI
IS42VM32400H

1M x 32Bits x 4Banks Mobile Synchronous DRAM

ISSI
ISSI


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