DataSheet.jp

IS42VM32400E PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IS42VM32400E
部品説明 128Mb Mobile Synchronous DRAM
メーカ ISSI
ロゴ ISSI ロゴ 



Total 24 pages
		

No Preview Available !

IS42VM32400E Datasheet, IS42VM32400E PDF,ピン配置, 機能
IS42VM81600E / IS42VM16800E / IS42VM32400E
IS45VM81600E / IS45VM16800E / IS45VM32400E
16Mx8, 8Mx16, 4Mx32
128Mb Mobile Synchronous DRAM
FEATURES
• Fully synchronous; all signals referenced to a
positive clock edge
• Internal bank for hiding row access and pre-
charge
• Programmable CAS latency: 2, 3
• Programmable Burst Length: 1, 2, 4, 8, and Full
Page
• Programmable Burst Sequence:
• Sequential and Interleave
• Auto Refresh (CBR)
• TCSR (Temperature Compensated Self Refresh)
• PASR (Partial Arrays Self Refresh): 1/16, 1/8,
1/4, 1/2, and Full
• Deep Power Down Mode (DPD)
• Driver Strength Control (DS): 1/4, 1/2, and Full
OPTIONS
• Configurations: 16M x 8, 8M x 16, 4M x 32
• Power Supply
IS42VMxxx – Vdd/Vddq = 1.8 V
• Packages:
x8 / x16 –TSOP II (54), BGA (54) [x16 only]
x32 – TSOP II (86), BGA (90)
• Temperature Range:
Commercial (0°C to +70°C)
Industrial (–40 ºC to 85 ºC)
Automotive, A1 (–40 ºC to 85 ºC)
Automotive, A2 (–40 ºC to 105 ºC)
JUNE 2011
DESCRIPTION
ISSI's 128Mb Mobile Synchronous DRAM achieves high-
speed data transfer using pipeline architecture. All input
and output signals refer to the rising edge of the clock
input. Both write and read accesses to the SDRAM are
burst oriented. The 128Mb Mobile Synchronous DRAM
is designed to minimize current consumption making it
ideal for low-power applications. Both TSOP and BGA
packages are offered, including industrial grade products.
KEY TIMING PARAMETERS
Parameter
CLK Cycle Time
CAS Latency = 3
CAS Latency = 2
CLK Frequency
CAS Latency = 3
CAS Latency = 2
Access Time from CLK
CAS Latency = 3
CAS Latency = 2
-75
7.5
9.6
133
104
5.4
8.0
-10 Unit
10 ns
12 ns
100 Mhz
83 Mhz
8.0 ns
9.0 ns
ADDRESSING TABLE
Parameter
Configuration
Refresh Count
Row Addressing
Column Addressing
Bank Addressing
Precharge Addressing
16M x 8
4M x 8 x 4 banks
4K/64ms
A0-A11
A0-A9
BA0, BA1
A10
8M x 16
2M x 16 x 4 banks
4K/64ms
A0-A11
A0-A8
BA0, BA1
A10
4M x 32
1M x 32 x 4 banks
4K/64ms
A0-A11
A0-A7
BA0, BA1
A10
Copyright © 2011 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time with-
out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain
the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such ap-
plications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. - www.issi.com
Rev.  A
04/08/2011
1

1 Page





ページ 合計 : 24 ページ
PDF
ダウンロード
[ IS42VM32400E.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
IS42VM32400E

128Mb Mobile Synchronous DRAM

ISSI
ISSI
IS42VM32400F

1M x 32Bits x 4Banks Mobile Synchronous DRAM

ISSI
ISSI
IS42VM32400G

1M x 32Bits x 4Banks Mobile Synchronous DRAM

ISSI
ISSI
IS42VM32400H

1M x 32Bits x 4Banks Mobile Synchronous DRAM

ISSI
ISSI

www.DataSheet.jp    |   2019   |  メール    |   最新    |   Sitemap